VS80N08AT MOSFET. Datasheet pdf. Equivalent
Type Designator: VS80N08AT
Marking Code: 80N08AT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 83 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 88 nC
trⓘ - Rise Time: 69 nS
Cossⓘ - Output Capacitance: 390 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO220AB
VS80N08AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VS80N08AT Datasheet (PDF)
..1. Size:747K cn vanguard
vs80n08at.pdf
vs80n08at.pdf
VS80N08AT 80V/83A N-Channel Advanced Power MOSFET V DS 80 V Features R DS(on),TYP@ VGS=10 V 6.8 m N-Channel10V Logic Level Control I D 83 A Enhancement mode Very low on-resistance RDS(on) @ VGS=10 V 100% Avalanche test TO-220AB Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information VS80N08AT TO-220AB 8
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