All MOSFET. VS80N08AT Datasheet

 

VS80N08AT Datasheet and Replacement


   Type Designator: VS80N08AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 83 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 69 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220AB
 

 VS80N08AT substitution

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VS80N08AT Datasheet (PDF)

 ..1. Size:747K  cn vanguard
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VS80N08AT

VS80N08AT 80V/83A N-Channel Advanced Power MOSFET V DS 80 V Features R DS(on),TYP@ VGS=10 V 6.8 m N-Channel10V Logic Level Control I D 83 A Enhancement mode Very low on-resistance RDS(on) @ VGS=10 V 100% Avalanche test TO-220AB Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information VS80N08AT TO-220AB 8

Datasheet: VS6412ASL , VS6614GS , VS6640AC , VS6808DH , VS6880AT , VS7N65AD , VS7N65AF , VS8068AD , AON7410 , VS8205BH , VSB012N03MS , VSD004N03MS , VSD007N06MS , VSD013N10MS , VSD050P10MS , VSD090N10MS , VSE009NE6MS-G .

History: AP2764AP-A-HF

Keywords - VS80N08AT MOSFET datasheet

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