All MOSFET. VSD013N10MS Datasheet

 

VSD013N10MS Datasheet and Replacement


   Type Designator: VSD013N10MS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 52 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 112 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO252
 

 VSD013N10MS substitution

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VSD013N10MS Datasheet (PDF)

 ..1. Size:320K  cn vanguard
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VSD013N10MS

VSD013N10MS 100V/52A N-Channel Advanced Power MOSFET V DS 100 VFeatures R DS(on),TYP@ VGS=10 V 11 m N-Channel R DS(on),TYP@ VGS=4.5 V 12 m Enhancement mode I D 52 A Very low on-resistance RDS(on) @ VGS=4.5 V TO-252 Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking informat

Datasheet: VS7N65AD , VS7N65AF , VS8068AD , VS80N08AT , VS8205BH , VSB012N03MS , VSD004N03MS , VSD007N06MS , 12N60 , VSD050P10MS , VSD090N10MS , VSE009NE6MS-G , VSE090N10MS , VSF013N10MS , VSF600N70HS , VSI008N10MS , VSI013N08MS .

History: IRLR8729PBF-1 | NTMFS5C426NLT1G

Keywords - VSD013N10MS MOSFET datasheet

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