VSD013N10MS PDF and Equivalents Search

 

VSD013N10MS Specs and Replacement

Type Designator: VSD013N10MS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 52 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 112 nS

Cossⓘ - Output Capacitance: 225 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TO252

VSD013N10MS substitution

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VSD013N10MS datasheet

 ..1. Size:320K  cn vanguard
 vsd013n10ms.pdf pdf_icon

VSD013N10MS

VSD013N10MS 100V/52A N-Channel Advanced Power MOSFET V DS 100 V Features R DS(on),TYP@ VGS=10 V 11 m N-Channel R DS(on),TYP@ VGS=4.5 V 12 m Enhancement mode I D 52 A Very low on-resistance RDS(on) @ VGS=4.5 V TO-252 Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking informat... See More ⇒

Detailed specifications: VS7N65AD, VS7N65AF, VS8068AD, VS80N08AT, VS8205BH, VSB012N03MS, VSD004N03MS, VSD007N06MS, 12N60, VSD050P10MS, VSD090N10MS, VSE009NE6MS-G, VSE090N10MS, VSF013N10MS, VSF600N70HS, VSI008N10MS, VSI013N08MS

Keywords - VSD013N10MS MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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