VSD013N10MS MOSFET. Datasheet pdf. Equivalent
Type Designator: VSD013N10MS
Marking Code: 013N10M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 52 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 83 nC
trⓘ - Rise Time: 112 nS
Cossⓘ - Output Capacitance: 225 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: TO252
VSD013N10MS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VSD013N10MS Datasheet (PDF)
..1. Size:320K cn vanguard
vsd013n10ms.pdf
vsd013n10ms.pdf
VSD013N10MS 100V/52A N-Channel Advanced Power MOSFET V DS 100 VFeatures R DS(on),TYP@ VGS=10 V 11 m N-Channel R DS(on),TYP@ VGS=4.5 V 12 m Enhancement mode I D 52 A Very low on-resistance RDS(on) @ VGS=4.5 V TO-252 Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking informat
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
