All MOSFET. VSD013N10MS Datasheet

 

VSD013N10MS MOSFET. Datasheet pdf. Equivalent


   Type Designator: VSD013N10MS
   Marking Code: 013N10M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 52 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 83 nC
   trⓘ - Rise Time: 112 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO252

 VSD013N10MS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VSD013N10MS Datasheet (PDF)

 ..1. Size:320K  cn vanguard
 vsd013n10ms.pdf

VSD013N10MS VSD013N10MS

VSD013N10MS 100V/52A N-Channel Advanced Power MOSFET V DS 100 VFeatures R DS(on),TYP@ VGS=10 V 11 m N-Channel R DS(on),TYP@ VGS=4.5 V 12 m Enhancement mode I D 52 A Very low on-resistance RDS(on) @ VGS=4.5 V TO-252 Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking informat

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: RSH065N06 | SDF230JAB | RSR025N05 | APT8030JVFR | 2SK1006-01MR | RU20P4C6

 

 
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