All MOSFET. VSD050P10MS Datasheet

 

VSD050P10MS MOSFET. Datasheet pdf. Equivalent


   Type Designator: VSD050P10MS
   Marking Code: 050P10M
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 34 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 85 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.061 Ohm
   Package: TO252

 VSD050P10MS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VSD050P10MS Datasheet (PDF)

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 vsd050p10ms.pdf

VSD050P10MS VSD050P10MS

VSD050P10MS -100V/-34A P-Channel Advanced Power MOSFET V DS -100 V Features R DS(on),TYP@ VGS=-10 V 47 m P-Channel-5V Logic Level Control R DS(on),TYP@ VGS=-4.5V 49 m Low on-resistance RDS(on) @ VGS=-4.5 V I D -34 A Fast Switching and High efficiency Enhancement mode TO-252 100% Avalanche Tested Pb-free lead plating; RoHS compliant

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HAT1031T | ZXMN3A02N8

 

 
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