VSD050P10MS MOSFET. Datasheet pdf. Equivalent
Type Designator: VSD050P10MS
Marking Code: 050P10M
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 34 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 85 nC
Rise Time (tr): 22 nS
Drain-Source Capacitance (Cd): 180 pF
Maximum Drain-Source On-State Resistance (Rds): 0.061 Ohm
Package: TO252
VSD050P10MS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VSD050P10MS Datasheet (PDF)
..1. Size:608K cn vanguard
vsd050p10ms.pdf
vsd050p10ms.pdf
VSD050P10MS -100V/-34A P-Channel Advanced Power MOSFET V DS -100 V Features R DS(on),TYP@ VGS=-10 V 47 m P-Channel-5V Logic Level Control R DS(on),TYP@ VGS=-4.5V 49 m Low on-resistance RDS(on) @ VGS=-4.5 V I D -34 A Fast Switching and High efficiency Enhancement mode TO-252 100% Avalanche Tested Pb-free lead plating; RoHS compliant
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF1404 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
