VSD050P10MS PDF and Equivalents Search

 

VSD050P10MS Specs and Replacement

Type Designator: VSD050P10MS

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 34 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.061 Ohm

Package: TO252

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VSD050P10MS datasheet

 ..1. Size:608K  cn vanguard
 vsd050p10ms.pdf pdf_icon

VSD050P10MS

VSD050P10MS -100V/-34A P-Channel Advanced Power MOSFET V DS -100 V Features R DS(on),TYP@ VGS=-10 V 47 m P-Channel -5V Logic Level Control R DS(on),TYP@ VGS=-4.5V 49 m Low on-resistance RDS(on) @ VGS=-4.5 V I D -34 A Fast Switching and High efficiency Enhancement mode TO-252 100% Avalanche Tested Pb-free lead plating; RoHS compliant ... See More ⇒

Detailed specifications: VS7N65AF, VS8068AD, VS80N08AT, VS8205BH, VSB012N03MS, VSD004N03MS, VSD007N06MS, VSD013N10MS, 5N65, VSD090N10MS, VSE009NE6MS-G, VSE090N10MS, VSF013N10MS, VSF600N70HS, VSI008N10MS, VSI013N08MS, VSI080N06MS

Keywords - VSD050P10MS MOSFET specs

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