All MOSFET. VSD050P10MS Datasheet

 

VSD050P10MS Datasheet and Replacement


   Type Designator: VSD050P10MS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 34 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.061 Ohm
   Package: TO252
 

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VSD050P10MS Datasheet (PDF)

 ..1. Size:608K  cn vanguard
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VSD050P10MS

VSD050P10MS -100V/-34A P-Channel Advanced Power MOSFET V DS -100 V Features R DS(on),TYP@ VGS=-10 V 47 m P-Channel-5V Logic Level Control R DS(on),TYP@ VGS=-4.5V 49 m Low on-resistance RDS(on) @ VGS=-4.5 V I D -34 A Fast Switching and High efficiency Enhancement mode TO-252 100% Avalanche Tested Pb-free lead plating; RoHS compliant

Datasheet: VS7N65AF , VS8068AD , VS80N08AT , VS8205BH , VSB012N03MS , VSD004N03MS , VSD007N06MS , VSD013N10MS , 4435 , VSD090N10MS , VSE009NE6MS-G , VSE090N10MS , VSF013N10MS , VSF600N70HS , VSI008N10MS , VSI013N08MS , VSI080N06MS .

History: CEU02N6G | AONS66612 | PSMN5R9-30YL | DH16N06 | DH160P03V | BLP04N10-P | STD1955NL

Keywords - VSD050P10MS MOSFET datasheet

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