All MOSFET. VSE009NE6MS-G Datasheet

 

VSE009NE6MS-G Datasheet and Replacement


   Type Designator: VSE009NE6MS-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 435 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: PDFN3333
 

 VSE009NE6MS-G substitution

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VSE009NE6MS-G Datasheet (PDF)

 ..1. Size:1886K  cn vanguard
vse009ne6ms-g.pdf pdf_icon

VSE009NE6MS-G

VSE009NE6MS-G60V/50A N-Channel Advanced Power MOSFETV DS 60 VFeaturesR DS(on),TYP@ VGS=10V 7 m Enhancement modeR DS(on),TYP@ VGS=4.5V 12 m VitoMOS TechnologyI D 50 A Fast Switching and High efficiencyPDFN3333 100% Avalanche TestedPart ID Package Type Marking PackingVSE009NE6MS-G PDFN3333 009NE6M 5000pcs/ReelMaximum ratings, at T A=25 C, unle

 9.1. Size:984K  cn vgsemi
vse008ne2ls.pdf pdf_icon

VSE009NE6MS-G

VSE008NE2LS25V/55A N-Channel Advanced Power MOSFETV DS 25 VFeaturesR DS(on),TYP@ VGS=10 V 5.8 m N-Channel3.3V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 6.6 m Low RDS(on) and High EfficiencyI D 55 A Fast Switching Enhancement modePDFN3333 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVSE008NE2

 9.2. Size:966K  cn vgsemi
vse004n04ms.pdf pdf_icon

VSE009NE6MS-G

VSE004N04MS40V/48A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 4 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 5.1 m Low RDS(on) to minimize conduction lossesI D(Wire bond Limited) 48 A 100% Avalanche Tested,100% Rg TestedPDFN3333Part ID Package Type Marking PackingVSE004N04MS PDFN3333 004N04M 5000PCS/ReelMaximum ratings, at TA =25

 9.3. Size:1250K  cn vgsemi
vse002n03ms-g.pdf pdf_icon

VSE009NE6MS-G

VSE002N03MS-G30V/155A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 1.4 m Enhancement modeR DS(on),TYP@ VGS=4.5V 2.2 m Low on-resistance RDS(on) @ VGS=4.5 VI D(Silicon Limited) 155 A VitoMOS Technology Fast Switching and High efficiencyPDFN3333 ESD Protection HBM 1500V Pb-free lead plating; RoHS compliant; Halogen

Datasheet: VS80N08AT , VS8205BH , VSB012N03MS , VSD004N03MS , VSD007N06MS , VSD013N10MS , VSD050P10MS , VSD090N10MS , AON7506 , VSE090N10MS , VSF013N10MS , VSF600N70HS , VSI008N10MS , VSI013N08MS , VSI080N06MS , VSO008N10MS , VSO009N06MS-G .

Keywords - VSE009NE6MS-G MOSFET datasheet

 VSE009NE6MS-G cross reference
 VSE009NE6MS-G equivalent finder
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 VSE009NE6MS-G substitution
 VSE009NE6MS-G replacement

 

 
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