VSE009NE6MS-G Specs and Replacement
Type Designator: VSE009NE6MS-G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 435 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: PDFN3333
VSE009NE6MS-G substitution
- MOSFET ⓘ Cross-Reference Search
VSE009NE6MS-G datasheet
vse009ne6ms-g.pdf
VSE009NE6MS-G 60V/50A N-Channel Advanced Power MOSFET V DS 60 V Features R DS(on),TYP@ VGS=10V 7 m Enhancement mode R DS(on),TYP@ VGS=4.5V 12 m VitoMOS Technology I D 50 A Fast Switching and High efficiency PDFN3333 100% Avalanche Tested Part ID Package Type Marking Packing VSE009NE6MS-G PDFN3333 009NE6M 5000pcs/Reel Maximum ratings, at T A=25 C, unle... See More ⇒
vse008ne2ls.pdf
VSE008NE2LS 25V/55A N-Channel Advanced Power MOSFET V DS 25 V Features R DS(on),TYP@ VGS=10 V 5.8 m N-Channel 3.3V Logic Level Control R DS(on),TYP@ VGS=4.5 V 6.6 m Low RDS(on) and High Efficiency I D 55 A Fast Switching Enhancement mode PDFN3333 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VSE008NE2... See More ⇒
vse004n04ms.pdf
VSE004N04MS 40V/48A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 4 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 5.1 m Low RDS(on) to minimize conduction losses I D(Wire bond Limited) 48 A 100% Avalanche Tested,100% Rg Tested PDFN3333 Part ID Package Type Marking Packing VSE004N04MS PDFN3333 004N04M 5000PCS/Reel Maximum ratings, at TA =25... See More ⇒
vse002n03ms-g.pdf
VSE002N03MS-G 30V/155A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10V 1.4 m Enhancement mode R DS(on),TYP@ VGS=4.5V 2.2 m Low on-resistance RDS(on) @ VGS=4.5 V I D(Silicon Limited) 155 A VitoMOS Technology Fast Switching and High efficiency PDFN3333 ESD Protection HBM 1500V Pb-free lead plating; RoHS compliant; Halogen... See More ⇒
Detailed specifications: VS80N08AT, VS8205BH, VSB012N03MS, VSD004N03MS, VSD007N06MS, VSD013N10MS, VSD050P10MS, VSD090N10MS, IRFB3607, VSE090N10MS, VSF013N10MS, VSF600N70HS, VSI008N10MS, VSI013N08MS, VSI080N06MS, VSO008N10MS, VSO009N06MS-G
Keywords - VSE009NE6MS-G MOSFET specs
VSE009NE6MS-G cross reference
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VSE009NE6MS-G replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: WSF50N10 | AP60U03GH | NTD60N03-001 | STFI11NM65N | SE9926 | AP9972AGP | SW4N60
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