VSE009NE6MS-G PDF and Equivalents Search

 

VSE009NE6MS-G Specs and Replacement

Type Designator: VSE009NE6MS-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 435 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: PDFN3333

VSE009NE6MS-G substitution

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VSE009NE6MS-G datasheet

 ..1. Size:1886K  cn vanguard
vse009ne6ms-g.pdf pdf_icon

VSE009NE6MS-G

VSE009NE6MS-G 60V/50A N-Channel Advanced Power MOSFET V DS 60 V Features R DS(on),TYP@ VGS=10V 7 m Enhancement mode R DS(on),TYP@ VGS=4.5V 12 m VitoMOS Technology I D 50 A Fast Switching and High efficiency PDFN3333 100% Avalanche Tested Part ID Package Type Marking Packing VSE009NE6MS-G PDFN3333 009NE6M 5000pcs/Reel Maximum ratings, at T A=25 C, unle... See More ⇒

 9.1. Size:984K  cn vgsemi
vse008ne2ls.pdf pdf_icon

VSE009NE6MS-G

VSE008NE2LS 25V/55A N-Channel Advanced Power MOSFET V DS 25 V Features R DS(on),TYP@ VGS=10 V 5.8 m N-Channel 3.3V Logic Level Control R DS(on),TYP@ VGS=4.5 V 6.6 m Low RDS(on) and High Efficiency I D 55 A Fast Switching Enhancement mode PDFN3333 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VSE008NE2... See More ⇒

 9.2. Size:966K  cn vgsemi
vse004n04ms.pdf pdf_icon

VSE009NE6MS-G

VSE004N04MS 40V/48A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 4 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 5.1 m Low RDS(on) to minimize conduction losses I D(Wire bond Limited) 48 A 100% Avalanche Tested,100% Rg Tested PDFN3333 Part ID Package Type Marking Packing VSE004N04MS PDFN3333 004N04M 5000PCS/Reel Maximum ratings, at TA =25... See More ⇒

 9.3. Size:1250K  cn vgsemi
vse002n03ms-g.pdf pdf_icon

VSE009NE6MS-G

VSE002N03MS-G 30V/155A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10V 1.4 m Enhancement mode R DS(on),TYP@ VGS=4.5V 2.2 m Low on-resistance RDS(on) @ VGS=4.5 V I D(Silicon Limited) 155 A VitoMOS Technology Fast Switching and High efficiency PDFN3333 ESD Protection HBM 1500V Pb-free lead plating; RoHS compliant; Halogen... See More ⇒

Detailed specifications: VS80N08AT, VS8205BH, VSB012N03MS, VSD004N03MS, VSD007N06MS, VSD013N10MS, VSD050P10MS, VSD090N10MS, IRFB3607, VSE090N10MS, VSF013N10MS, VSF600N70HS, VSI008N10MS, VSI013N08MS, VSI080N06MS, VSO008N10MS, VSO009N06MS-G

Keywords - VSE009NE6MS-G MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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