All MOSFET. VST012N06MS Datasheet

 

VST012N06MS MOSFET. Datasheet pdf. Equivalent


   Type Designator: VST012N06MS
   Marking Code: 012N06M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 26 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 205 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO220AB

 VST012N06MS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VST012N06MS Datasheet (PDF)

 ..1. Size:315K  cn vanguard
 vst012n06ms.pdf

VST012N06MS VST012N06MS

VST012N06MS 60V/55A N-Channel Advanced Power MOSFET V DS 60 VFeatures R DS(on),TYP@ VGS=10 V 8.4 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5V 9.8 m Enhancement mode I D 55 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching TO-220AB 100% Avalanche Tested Pb-free lead plating; RoHS compliant Tape and reel Part ID Pac

 9.1. Size:307K  cn vanguard
 vst018n10ms.pdf

VST012N06MS VST012N06MS

VST018N10MS 100V/60A N-Channel Advanced Power MOSFET V DS 100 VFeatures R DS(on),TYP@ VGS=10V 14 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 15 m Enhancement mode I D 60 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching TO-220AB 100% Avalanche Tested Pb-free lead plating; RoHS compliant Tape and reel Part ID Pac

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: DMP2215L

 

 
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