FCH22N60N Datasheet. Specs and Replacement

Type Designator: FCH22N60N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 205 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm

Package: TO247 TO3P TO3PF

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FCH22N60N datasheet

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FCH22N60N

June 2010 TM SupreMOS FCH22N60N tm N-Channel MOSFET 600V, 22A, 0.165 Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling BVDSS>650V @ TJ = 150oC process that differentiates it from preceding multi-epi based tech- nologies. By utilizin... See More ⇒

Detailed specifications: FCD4N60, IRFD9020, FCD5N60, STU9916L, FCD7N60, STU816S, FCD9N60NTM, STU802S, IRF630, STU670S, FCH25N60N, STU668S, FCH35N60, STU666S, FCH47N60, STU664S, FCH47N60F

Keywords - FCH22N60N MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.