All MOSFET. FCH22N60N Datasheet

 

FCH22N60N Datasheet and Replacement


   Type Designator: FCH22N60N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 205 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
   Package: TO247 TO3P TO3PF
 

 FCH22N60N substitution

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FCH22N60N Datasheet (PDF)

 ..1. Size:379K  fairchild semi
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FCH22N60N

June 2010 TMSupreMOSFCH22N60NtmN-Channel MOSFET 600V, 22A, 0.165Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling BVDSS>650V @ TJ = 150oCprocess that differentiates it from preceding multi-epi based tech-nologies. By utilizin

Datasheet: FCD4N60 , IRFD9020 , FCD5N60 , STU9916L , FCD7N60 , STU816S , FCD9N60NTM , STU802S , IRF9540 , STU670S , FCH25N60N , STU668S , FCH35N60 , STU666S , FCH47N60 , STU664S , FCH47N60F .

History: 2SK1060

Keywords - FCH22N60N MOSFET datasheet

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