All MOSFET. SM180R65CT8TL Datasheet

 

SM180R65CT8TL MOSFET. Datasheet pdf. Equivalent


   Type Designator: SM180R65CT8TL
   Marking Code: 180R65C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 36 nC
   trⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 1480 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO247

 SM180R65CT8TL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SM180R65CT8TL Datasheet (PDF)

 5.1. Size:864K  cn sps
 sm180r65c.pdf

SM180R65CT8TL SM180R65CT8TL

SM180R65C30V /36A Single N Power MOSFET N-Channel Super Junction Power MOSFET Description ID 20A SM180R65C is power MOSFET using advanced super junction technology that can realize very low VDSS 650V on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling Rdson (max.) 0.18(VGS=10V, ID=10A) technology. These user friendly dev

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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