SM180R65CT8TL MOSFET. Datasheet pdf. Equivalent
Type Designator: SM180R65CT8TL
Marking Code: 180R65C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 312 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 36 nC
trⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 1480 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO247
SM180R65CT8TL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SM180R65CT8TL Datasheet (PDF)
5.1. Size:864K cn sps
sm180r65c.pdf
sm180r65c.pdf
SM180R65C30V /36A Single N Power MOSFET N-Channel Super Junction Power MOSFET Description ID 20A SM180R65C is power MOSFET using advanced super junction technology that can realize very low VDSS 650V on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling Rdson (max.) 0.18(VGS=10V, ID=10A) technology. These user friendly dev
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