SM180R65CT8TL Datasheet and Replacement
Type Designator: SM180R65CT8TL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 312 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 1480 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO247
SM180R65CT8TL substitution
SM180R65CT8TL Datasheet (PDF)
sm180r65c.pdf

SM180R65C30V /36A Single N Power MOSFET N-Channel Super Junction Power MOSFET Description ID 20A SM180R65C is power MOSFET using advanced super junction technology that can realize very low VDSS 650V on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling Rdson (max.) 0.18(VGS=10V, ID=10A) technology. These user friendly dev
Datasheet: YTF153 , YTF250 , YTF251 , SM140R50CT2TL , SM140R50CT1TL , SM140R50CT8TL , SM180R65CT2TL , SM180R65CT1TL , 20N60 , SM2301 , SM2302 , SM2305 , SM2306 , SM2312SRL , SM2314 , SM3012T9RL , SM32314D1RL .
History: TF410
Keywords - SM180R65CT8TL MOSFET datasheet
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History: TF410



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