SM180R65CT8TL Specs and Replacement
Type Designator: SM180R65CT8TL
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 312 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 1480 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO247
SM180R65CT8TL substitution
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SM180R65CT8TL datasheet
sm180r65c.pdf
SM180R65C 30V /36A Single N Power MOSFET N-Channel Super Junction Power MOSFET Description ID 20A SM180R65C is power MOSFET using advanced super junction technology that can realize very low VDSS 650V on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling Rdson (max.) 0.18 (VGS=10V, ID=10A) technology. These user friendly dev... See More ⇒
Detailed specifications: YTF153, YTF250, YTF251, SM140R50CT2TL, SM140R50CT1TL, SM140R50CT8TL, SM180R65CT2TL, SM180R65CT1TL, IRF840, SM2301, SM2302, SM2305, SM2306, SM2312SRL, SM2314, SM3012T9RL, SM32314D1RL
Keywords - SM180R65CT8TL MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: NTD4815NT4G
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