SM2306
MOSFET. Datasheet pdf. Equivalent
Type Designator: SM2306
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.9
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4.5
nC
trⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 110
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.037
Ohm
Package:
SOT23
SM2306
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SM2306
Datasheet (PDF)
..1. Size:2453K cn sps
sm2306.pdf 
SM2306N-Channel High Density Trench MOSFET Features1 Advanced Trench Process Technology. 2 High Density Cell Design for Ultra Low On-Resistance. 3 RoHS Compliant. PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 37 @ VGS = 10V, ID=4.0A 30V 4.0A 49 @ VGS = 4.5V, ID=3.5A SM2306 Pin Assignment & Symbol Ordering Information Ordering Number Pin Ass
0.1. Size:238K taiwansemi
tsm2306cx.pdf
TSM2306 30V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2. Source 57 @ VGS =10V 3.5 3. Drain 30 94 @ VGS =4.5V 2.8 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Pa
0.2. Size:257K sino
sm2306nsa.pdf
SM2306NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/4.7A,D RDS(ON)=40m (max.) @ VGS=10VS RDS(ON)=60m (max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-3(RoHS Compliant)DApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery Powered Systems.S Load SwitchN-Chann
0.3. Size:947K globaltech semi
gsm2306a.pdf
GSM2306A 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2306A, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m@VGS=1.8V Super high density cell design for These devices are particularl
0.4. Size:948K globaltech semi
gsm2306ae.pdf
GSM2306AE 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2306AE, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A,RDS(ON)=340m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m@VGS=1.8V Super high density cell design for These devices are particula
0.5. Size:149K silicon standard
ssm2306gn.pdf
SSM2306NN-CHANNEL ENHANCEMENT-MODE POWER MOSFETCapable of 2.5V gate-drive BVDSS 20VLower on-resistance RDS(ON) 32mDSurface-mount package ID 5.3ASSOT-23GDescriptionPower MOSFETs from Silicon Standard utilize advanced processing techniques toachieve the lowest possible on-resistance in an extremely efficient andDcost-effective device.The SOT-23 package is widely use
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