SM2306 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SM2306
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 0.9 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 4 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 4.5 nC
Время нарастания (tr): 12 ns
Выходная емкость (Cd): 110 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.037 Ohm
Тип корпуса: SOT23
SM2306 Datasheet (PDF)
sm2306.pdf
SM2306N-Channel High Density Trench MOSFET Features1 Advanced Trench Process Technology. 2 High Density Cell Design for Ultra Low On-Resistance. 3 RoHS Compliant. PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 37 @ VGS = 10V, ID=4.0A 30V 4.0A 49 @ VGS = 4.5V, ID=3.5A SM2306 Pin Assignment & Symbol Ordering Information Ordering Number Pin Ass
tsm2306cx.pdf
TSM2306 30V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2. Source 57 @ VGS =10V 3.5 3. Drain 30 94 @ VGS =4.5V 2.8 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Pa
sm2306nsa.pdf
SM2306NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/4.7A,D RDS(ON)=40m (max.) @ VGS=10VS RDS(ON)=60m (max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-3(RoHS Compliant)DApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery Powered Systems.S Load SwitchN-Chann
gsm2306a.pdf
GSM2306A 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2306A, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m@VGS=1.8V Super high density cell design for These devices are particularl
gsm2306ae.pdf
GSM2306AE 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2306AE, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A,RDS(ON)=340m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m@VGS=1.8V Super high density cell design for These devices are particula
ssm2306gn.pdf
SSM2306NN-CHANNEL ENHANCEMENT-MODE POWER MOSFETCapable of 2.5V gate-drive BVDSS 20VLower on-resistance RDS(ON) 32mDSurface-mount package ID 5.3ASSOT-23GDescriptionPower MOSFETs from Silicon Standard utilize advanced processing techniques toachieve the lowest possible on-resistance in an extremely efficient andDcost-effective device.The SOT-23 package is widely use
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: HM3400
