All MOSFET. SM4012T9RL Datasheet

 

SM4012T9RL MOSFET. Datasheet pdf. Equivalent


   Type Designator: SM4012T9RL
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.5 nC
   trⓘ - Rise Time: 2.2 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO252-4

 SM4012T9RL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SM4012T9RL Datasheet (PDF)

 ..1. Size:705K  cn sps
 sm4012t9rl.pdf

SM4012T9RL SM4012T9RL

SM4012T9RL30V /36A Single N Power MOSFET N-Ch and P-Ch Fast Switching MOSFETs 100% EAS Guaranteed Product Summary Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline BVDSS RDSON ID Advanced high cell density Trench 40V 19m 30A technology -40V 34m -20A Description TO252 Pin Configuration The 4012 is the high performanc

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