SM4485 MOSFET. Datasheet pdf. Equivalent
Type Designator: SM4485
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 18.6 nC
trⓘ - Rise Time: 15.2 nS
Cossⓘ - Output Capacitance: 260 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP8
SM4485 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SM4485 Datasheet (PDF)
sm4485.pdf
SM4485-40V P - Channel MOSFET Description -40V /-10A Power MOSFETVery low on-resistance RDS(on) @ VGS=4.5 VPb-free lead plating; RoHS compliant-40 VV DS14.0 mRDS(on),TYP@VGS=10V22.0 mRDS(on),TYP@VGS=4.5-10 AID Ordering Information Ordering Number Pin AssignmentPackage Packing1 2 3 4 5 6 7Lead Free Halogen Free 8SM4485PR GSM4485PR L S
gsm4486.pdf
GSM4486 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM4486, N-Channel enhancement mode 20V/9A,RDS(ON)=14m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/7A,RDS(ON)=17m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/5A,RDS(ON)=21m@VGS=1.8V Super high density cell design for extremely These devices are particularly
sm4480.pdf
SM448040V N - Channel MOSFET Description 40V /10A Power MOSFETVery low on-resistance RDS(on) @ VGS=4.5 VPb-free lead plating; RoHS compliant40 VV DS8.8 mRDS(on),TYP@VGS=10V13.8 mRDS(on),TYP@VGS=4.510 AID Ordering Information Ordering Number Pin AssignmentPackage Packing1 2 3 4 5 6 7Lead Free Halogen Free 8SM4480PR GSM4480PR L SOP-8 S
Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , P55NF06 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .
