SM454AT9RL Datasheet and Replacement
Type Designator: SM454AT9RL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 82 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO252
SM454AT9RL substitution
SM454AT9RL Datasheet (PDF)
sm454at9rl.pdf

SM454AT9RL40V /20A Single N Power MOSFET H N04H N 40V /20A Single N Power MOSFET 20N04HGeneral Description 40 VV DS40V /20A Single N Power MOSFET 28.0 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 44.0 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 20 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg Tested
gsm4546.pdf

GSM4546 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4546, N-Channel enhancement mode 40V/6.8A,RDS(ON)=52m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/5.6A,RDS(ON)=70m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
Datasheet: SM4411 , SM4421 , SM4435 , SM4441 , SM4447A , SM4480 , SM4485 , SM4496PRL , TK10A60D , SM4606 , SM4614BPRL , SM4616PRL , SM4620PRL , SM4627PRL , SM4800 , SM4803APRL , SM4805PRL .
History: BUZ73AL | SSM3K329R | PMPB12UNEA | MP4N150
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History: BUZ73AL | SSM3K329R | PMPB12UNEA | MP4N150



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