All MOSFET. SM6366ED1RL Datasheet

 

SM6366ED1RL MOSFET. Datasheet pdf. Equivalent


   Type Designator: SM6366ED1RL
   Marking Code: 6366
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 34 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 28 nC
   trⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: DFN5X6

 SM6366ED1RL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SM6366ED1RL Datasheet (PDF)

 ..1. Size:743K  cn sps
 sm6366ed1rl.pdf

SM6366ED1RL SM6366ED1RL

SM6366ED1RL30V /34A Single N Power MOSFET D E03D E 30V /34A Single N Power MOSFET 34E03DGeneral Description 30 VV DS30V /34A Single N Power MOSFET 3.6 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 5.7 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 34 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg Tested

 9.1. Size:777K  cn sps
 sm6362d1rl.pdf

SM6366ED1RL SM6366ED1RL

SM6362D1RL30V /60A Single N Power MOSFET D N03D N 30V /60A Single N Power MOSFET 60N03DGeneral Description 30 VV DS30V /60A Single N Power MOSFET 6.0 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 9.5 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 60 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg TestedS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AOB4S60L

 

 
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