SM6802S1RL MOSFET. Datasheet pdf. Equivalent
Type Designator: SM6802S1RL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 3.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 3.4 nS
Cossⓘ - Output Capacitance: 100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
Package: SOT23-6
SM6802S1RL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SM6802S1RL Datasheet (PDF)
sm6802s1rl.pdf
SM6802S1RL30V /3.6A Single 2N Power MOSFET B B03B B 30V /3.6A Single 2N Power MOSFET 4B03BGeneral Description 30 VV DS30V /3.6A Single 2N Power MOSFET 39.0 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 60.0 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 3.6 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg T
gsm6801.pdf
30V P-Channel Enhancement Mode MOSFET Product Description Features GSM6801, P-Channel enhancement mode -30V/-3.8A,RDS(ON)=135m@VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-2.8A,RDS(ON)=175m@VGS=-4.5V provide excellent RDS(ON), low gate charge. -30V/-1.8A,RDS(ON)=245m@VGS=-2.5V These devices are particularly suited for low Super high density cell
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
