All MOSFET. SM6802S1RL Datasheet

 

SM6802S1RL MOSFET. Datasheet pdf. Equivalent


   Type Designator: SM6802S1RL
   Marking Code: H29K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 3.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.55 nC
   trⓘ - Rise Time: 3.4 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: SOT23-6

 SM6802S1RL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SM6802S1RL Datasheet (PDF)

 ..1. Size:367K  cn sps
 sm6802s1rl.pdf

SM6802S1RL SM6802S1RL

SM6802S1RL30V /3.6A Single 2N Power MOSFET B B03B B 30V /3.6A Single 2N Power MOSFET 4B03BGeneral Description 30 VV DS30V /3.6A Single 2N Power MOSFET 39.0 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 60.0 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 3.6 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg T

 9.1. Size:400K  globaltech semi
 gsm6801.pdf

SM6802S1RL SM6802S1RL

30V P-Channel Enhancement Mode MOSFET Product Description Features GSM6801, P-Channel enhancement mode -30V/-3.8A,RDS(ON)=135m@VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-2.8A,RDS(ON)=175m@VGS=-4.5V provide excellent RDS(ON), low gate charge. -30V/-1.8A,RDS(ON)=245m@VGS=-2.5V These devices are particularly suited for low Super high density cell

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: BFL4037

 

 
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