All MOSFET. SM6802S1RL Datasheet

 

SM6802S1RL Datasheet and Replacement


   Type Designator: SM6802S1RL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.4 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: SOT23-6
 

 SM6802S1RL substitution

   - MOSFET ⓘ Cross-Reference Search

 

SM6802S1RL Datasheet (PDF)

 ..1. Size:367K  cn sps
 sm6802s1rl.pdf pdf_icon

SM6802S1RL

SM6802S1RL30V /3.6A Single 2N Power MOSFET B B03B B 30V /3.6A Single 2N Power MOSFET 4B03BGeneral Description 30 VV DS30V /3.6A Single 2N Power MOSFET 39.0 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 60.0 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 3.6 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg T

 9.1. Size:400K  globaltech semi
 gsm6801.pdf pdf_icon

SM6802S1RL

30V P-Channel Enhancement Mode MOSFET Product Description Features GSM6801, P-Channel enhancement mode -30V/-3.8A,RDS(ON)=135m@VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-2.8A,RDS(ON)=175m@VGS=-4.5V provide excellent RDS(ON), low gate charge. -30V/-1.8A,RDS(ON)=245m@VGS=-2.5V These devices are particularly suited for low Super high density cell

Datasheet: SM6366ED1RL , SM6426D1RL , SM6442D1RL , SM6512D1RL , SM6536D1RL , SM6590D1RL , SM66406D1RL , SM6796D1RL , AO3401 , SM9435 , SM95N03A , SM9926 , SMIRF10N65T1TL , SMIRF10N65T2TL , SMIRF12N65T1TL , SMIRF12N65T2TL , SMIRF13N50T1TL .

History: IXFH23N60Q | NVMFD030N06C | IXTM4N95A | FQD1N50TF | NCE8295AG | 13N50G-TQ2-R | SM8206ACT

Keywords - SM6802S1RL MOSFET datasheet

 SM6802S1RL cross reference
 SM6802S1RL equivalent finder
 SM6802S1RL lookup
 SM6802S1RL substitution
 SM6802S1RL replacement

 

 
Back to Top

 


 
.