SM6802S1RL Datasheet. Specs and Replacement

Type Designator: SM6802S1RL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.4 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm

Package: SOT23-6

SM6802S1RL substitution

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SM6802S1RL datasheet

 ..1. Size:367K  cn sps
sm6802s1rl.pdf pdf_icon

SM6802S1RL

SM6802S1RL 30V /3.6A Single 2N Power MOSFET B B03B B 30V /3.6A Single 2N Power MOSFET 4B03B General Description 30 V V DS 30V /3.6A Single 2N Power MOSFET 39.0 m RDS(on),TYP@VGS=10V Very low on-resistance RDS(on) @ VGS=4.5 V 60.0 m RDS(on),TYP@VGS=4.5 Pb-free lead plating; RoHS compliant 3.6 A ID Tape and reel Part ID Package Type Marking infomation 100% UIS Tested 100% Rg T... See More ⇒

 9.1. Size:400K  globaltech semi
gsm6801.pdf pdf_icon

SM6802S1RL

30V P-Channel Enhancement Mode MOSFET Product Description Features GSM6801, P-Channel enhancement mode -30V/-3.8A,RDS(ON)=135m @VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-2.8A,RDS(ON)=175m @VGS=-4.5V provide excellent RDS(ON), low gate charge. -30V/-1.8A,RDS(ON)=245m @VGS=-2.5V These devices are particularly suited for low Super high density cell... See More ⇒

Detailed specifications: SM6366ED1RL, SM6426D1RL, SM6442D1RL, SM6512D1RL, SM6536D1RL, SM6590D1RL, SM66406D1RL, SM6796D1RL, P60NF06, SM9435, SM95N03A, SM9926, SMIRF10N65T1TL, SMIRF10N65T2TL, SMIRF12N65T1TL, SMIRF12N65T2TL, SMIRF13N50T1TL

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