All MOSFET. SMIRF18N50T2TL Datasheet

 

SMIRF18N50T2TL Datasheet and Replacement


   Type Designator: SMIRF18N50T2TL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO220F
 

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SMIRF18N50T2TL Datasheet (PDF)

 4.1. Size:1558K  cn sps
 smirf18n50.pdf pdf_icon

SMIRF18N50T2TL

SMIRF18N5030V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 18A SMIRF18N50 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 500V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.35(VGS=10V, ID=9A) on-state resistance, provide superior

 8.1. Size:1604K  cn sps
 smirf16n65.pdf pdf_icon

SMIRF18N50T2TL

SMIRF16N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6(VGS=10V, ID=8A) on-state resistance, provide superior

 8.2. Size:1313K  cn sps
 smirf12n65.pdf pdf_icon

SMIRF18N50T2TL

SMIRF12N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 12A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.75(VGS=10V, ID=6A) on-state resistance, provide superior

 8.3. Size:1202K  cn sps
 smirf10n65.pdf pdf_icon

SMIRF18N50T2TL

SMIRF10N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 10A SMIRF10N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 1.0(VGS=10V, ID=5A) on-state resistance, provide superior

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Datasheet: SMIRF12N65T1TL , SMIRF12N65T2TL , SMIRF13N50T1TL , SMIRF13N50T2TL , SMIRF16N65T1TL , SMIRF16N65T2TL , SMIRF16N65T8TL , SMIRF18N50T1TL , IRF9640 , SMIRF18N50T8TL , SMIRF20N65T1TL , SMIRF20N65T2TL , SMIRF20N65T8TL , SMIRF4N65T1TL , SMIRF4N65T2TL , SMIRF4N65TBRL , SMIRF4N65T9RL .

History: IPD25DP06NM | QM2710D

Keywords - SMIRF18N50T2TL MOSFET datasheet

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