SMIRF18N50T2TL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SMIRF18N50T2TL
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 65 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Максимально допустимый постоянный ток стока |Id|: 18 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 85 ns
Выходная емкость (Cd): 225 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.35 Ohm
Тип корпуса: TO220F
Аналог (замена) для SMIRF18N50T2TL
SMIRF18N50T2TL Datasheet (PDF)
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smirf13n50.pdf
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