SMIRF20N65T8TL Datasheet. Specs and Replacement

Type Designator: SMIRF20N65T8TL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 365 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO247

SMIRF20N65T8TL substitution

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SMIRF20N65T8TL datasheet

 4.1. Size:1649K  cn sps
 smirf20n65.pdf pdf_icon

SMIRF20N65T8TL

SMIRF20N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 20A IRF20N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.5 (VGS=10V, ID=10A) on-state resistance, provide superior s... See More ⇒

 9.1. Size:1604K  cn sps
 smirf16n65.pdf pdf_icon

SMIRF20N65T8TL

SMIRF16N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6 (VGS=10V, ID=8A) on-state resistance, provide superior ... See More ⇒

 9.2. Size:1313K  cn sps
 smirf12n65.pdf pdf_icon

SMIRF20N65T8TL

SMIRF12N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 12A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.75 (VGS=10V, ID=6A) on-state resistance, provide superior... See More ⇒

 9.3. Size:1247K  cn sps
 smirf8n60.pdf pdf_icon

SMIRF20N65T8TL

SMIRF8N60 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 8A SMIRF8N60 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 600V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson(max) 1.2 (VGS=10V, ID=4A) on-state resistance, provide superior switchi... See More ⇒

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Detailed specifications: SMIRF16N65T1TL, SMIRF16N65T2TL, SMIRF16N65T8TL, SMIRF18N50T1TL, SMIRF18N50T2TL, SMIRF18N50T8TL, SMIRF20N65T1TL, SMIRF20N65T2TL, AOD4184A, SMIRF4N65T1TL, SMIRF4N65T2TL, SMIRF4N65TBRL, SMIRF4N65T9RL, SMIRF5N65T1TL, SMIRF5N65T2TL, SMIRF5N65TBRL, SMIRF5N65T9TL

Keywords - SMIRF20N65T8TL MOSFET specs

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