Справочник MOSFET. SMIRF20N65T8TL

 

SMIRF20N65T8TL Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SMIRF20N65T8TL
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 365 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 80 ns
   Cossⓘ - Выходная емкость: 250 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.5 Ohm
   Тип корпуса: TO247
     - подбор MOSFET транзистора по параметрам

 

SMIRF20N65T8TL Datasheet (PDF)

 4.1. Size:1649K  cn sps
 smirf20n65.pdf pdf_icon

SMIRF20N65T8TL

SMIRF20N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 20A IRF20N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.5(VGS=10V, ID=10A) on-state resistance, provide superior s

 9.1. Size:1604K  cn sps
 smirf16n65.pdf pdf_icon

SMIRF20N65T8TL

SMIRF16N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6(VGS=10V, ID=8A) on-state resistance, provide superior

 9.2. Size:1313K  cn sps
 smirf12n65.pdf pdf_icon

SMIRF20N65T8TL

SMIRF12N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 12A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.75(VGS=10V, ID=6A) on-state resistance, provide superior

 9.3. Size:1247K  cn sps
 smirf8n60.pdf pdf_icon

SMIRF20N65T8TL

SMIRF8N6030V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 8A SMIRF8N60 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 600V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson(max) 1.2(VGS=10V, ID=4A) on-state resistance, provide superior switchi

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History: IXFP56N30X3 | FDB28N30TM | IAUC100N10S5N040 | STU601S | AP70T03AJ | AOSS32128 | MS65R360F

 

 
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