SMIRF8N60T1TL MOSFET. Datasheet pdf. Equivalent
Type Designator: SMIRF8N60T1TL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 152 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 110 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO220
SMIRF8N60T1TL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SMIRF8N60T1TL Datasheet (PDF)
smirf8n60.pdf
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smirf8n65.pdf
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smirf12n65.pdf
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smirf10n65.pdf
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smirf4n65.pdf
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smirf5n65.pdf
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smirf18n50.pdf
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smirf13n50.pdf
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Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: SMT10N60
