SMIRF8N60T1TL - аналоги и даташиты транзистора

 

SMIRF8N60T1TL - Даташиты. Аналоги. Основные параметры


   Наименование производителя: SMIRF8N60T1TL
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 152 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 27 ns
   Cossⓘ - Выходная емкость: 110 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для SMIRF8N60T1TL

   - подбор ⓘ MOSFET транзистора по параметрам

 

SMIRF8N60T1TL Datasheet (PDF)

 5.1. Size:1247K  cn sps
 smirf8n60.pdf pdf_icon

SMIRF8N60T1TL

SMIRF8N6030V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 8A SMIRF8N60 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 600V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson(max) 1.2(VGS=10V, ID=4A) on-state resistance, provide superior switchi

 6.1. Size:1406K  cn sps
 smirf8n65.pdf pdf_icon

SMIRF8N60T1TL

SMIRF8N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 8A SMIRF8N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson(max) 1.2(VGS=10V, ID=4A) on-state resistance, provide superior switchi

 9.1. Size:1604K  cn sps
 smirf16n65.pdf pdf_icon

SMIRF8N60T1TL

SMIRF16N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6(VGS=10V, ID=8A) on-state resistance, provide superior

 9.2. Size:1313K  cn sps
 smirf12n65.pdf pdf_icon

SMIRF8N60T1TL

SMIRF12N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 12A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.75(VGS=10V, ID=6A) on-state resistance, provide superior

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... SMIRF4N65T9RL , SMIRF5N65T1TL , SMIRF5N65T2TL , SMIRF5N65TBRL , SMIRF5N65T9TL , SMIRF7N65T1TL , SMIRF7N65T2TL , SMIRF7N65T9RL , IRF540 , SMIRF8N60T2TL , SMIRF8N65T1TL , SMIRF8N65T2TL , 2SK2941 , 2SK2949L , 2SK2949S , 2SK2954-MR , 2SK296 .

History: 2SK3594-01 | IPI111N15N3 | AP4232BGM-HF | VP3203N3 | SMIRF7N65T9RL | PS04N20SA | 8N80A

 

 
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