2SK3193 Datasheet and Replacement
Type Designator: 2SK3193
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 1340 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: SC92
2SK3193 substitution
2SK3193 Datasheet (PDF)
2sk3193.pdf

Power MOSFETs2SK3193Silicon N-channel power MOSFETUnit: mmFor switching15.00.3 5.00.211.00.2 (3.2) Features 3.20.1 Avalanche energy capability guaranteed High-speed switching Low ON resistance Ron No secondary breakdown 2.00.12.00.21.10.1 0.60.2 Absolute Maximum Ratings TC = 25CParameter Symbol Rating Unit5.450.3Drain-s
2sk3193.pdf

isc N-Channel MOSFET Transistor 2SK3193FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 350V(Min)DSSStatic Drain-Source On-Resistance: R = 150m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3192.pdf

Power MOSFETs2SK3192Silicon N-channel power MOSFETUnit: mm15.00.3 5.00.2 Features11.00.2 (3.2) Avalanche energy capability guaranteed High-speed switching Low ON resistance Ron 3.20.1 No secondary breakdown Applications2.00.12.00.2 PDP Switching mode regulator1.10.1 0.60.2 Absolute Maximum Ratings TC = 25C5.45
Datasheet: 2SK3009 , 2SK3009B , 2SK3009LS , 2SK3009P , 2SK3012 , 2SK3013 , 2SK3023 , 2SK3101LS , 7N65 , 2SK3217-01MR , 2SK3278D , 2SK3278I , 2SK3301D , 2SK3301I , 2SK3305-S , 2SK3325-S , 2SK3325-ZJ .
History: GSM2309 | PSMN030-150P | PSMN1R2-25YLC | APM8005K | AONS66923 | BLM12P03-R | AONS36312
Keywords - 2SK3193 MOSFET datasheet
2SK3193 cross reference
2SK3193 equivalent finder
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2SK3193 substitution
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History: GSM2309 | PSMN030-150P | PSMN1R2-25YLC | APM8005K | AONS66923 | BLM12P03-R | AONS36312



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