Power MOSFETs2SK3193Silicon N-channel power MOSFETUnit: mmFor switching15.00.3 5.00.211.00.2 (3.2) Features 3.20.1 Avalanche energy capability guaranteed High-speed switching Low ON resistance Ron No secondary breakdown 2.00.12.00.21.10.1 0.60.2 Absolute Maximum Ratings TC = 25CParameter Symbol Rating Unit5.450.3Drain-s

isc N-Channel MOSFET Transistor 2SK3193FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 350V(Min)DSSStatic Drain-Source On-Resistance: R = 150m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Power MOSFETs2SK3192Silicon N-channel power MOSFETUnit: mm15.00.3 5.00.2 Features11.00.2 (3.2) Avalanche energy capability guaranteed High-speed switching Low ON resistance Ron 3.20.1 No secondary breakdown Applications2.00.12.00.2 PDP Switching mode regulator1.10.1 0.60.2 Absolute Maximum Ratings TC = 25C5.45

2SK3199External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 500 V I = 100A, V = 0V(BR) DSS D GS V 500 VDSSI 100 nA V = 30VGSS GS V 30 VGSSI 100 A V = 500V, V = 0VDSS DS GS I 5ADV 2.0 3.0 4.0 V V = 10V, I = 1mATH DS D I 2

isc N-Channel MOSFET Transistor 2SK3199FEATURESDrain Current I = 5A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) 100% avalanche testedDS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

isc N-Channel MOSFET Transistor 2SK3192FEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 68m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d