2SK3193 datasheet, подбор замены

 ..1. Size:207K  1
 2sk3193.pdf 

Power MOSFETs 2SK3193 Silicon N-channel power MOSFET Unit mm For switching 15.0 0.3 5.0 0.2 11.0 0.2 (3.2) Features 3.2 0.1 Avalanche energy capability guaranteed High-speed switching Low ON resistance Ron No secondary breakdown 2.0 0.1 2.0 0.2 1.1 0.1 0.6 0.2 Absolute Maximum Ratings TC = 25 C Parameter Symbol Rating Unit 5.45 0.3 Drain-s

 ..2. Size:273K  inchange semiconductor
 2sk3193.pdf 

isc N-Channel MOSFET Transistor 2SK3193 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 350V(Min) DSS Static Drain-Source On-Resistance R = 150m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.1. Size:87K  panasonic
 2sk3192.pdf 

Power MOSFETs 2SK3192 Silicon N-channel power MOSFET Unit mm 15.0 0.3 5.0 0.2 Features 11.0 0.2 (3.2) Avalanche energy capability guaranteed High-speed switching Low ON resistance Ron 3.2 0.1 No secondary breakdown Applications 2.0 0.1 2.0 0.2 PDP Switching mode regulator 1.1 0.1 0.6 0.2 Absolute Maximum Ratings TC = 25 C 5.45

 8.2. Size:51K  hitachi
 2sk319 2sk320.pdf 

 8.3. Size:43K  sanken-ele
 2sk3199.pdf 

2SK3199 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 500 V I = 100 A, V = 0V (BR) DSS D GS V 500 V DSS I 100 nA V = 30V GSS GS V 30 V GSS I 100 A V = 500V, V = 0V DSS DS GS I 5A D V 2.0 3.0 4.0 V V = 10V, I = 1mA TH DS D I 2

 8.4. Size:251K  inchange semiconductor
 2sk3199.pdf 

isc N-Channel MOSFET Transistor 2SK3199 FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) 100% avalanche tested DS(on) Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a

 8.5. Size:274K  inchange semiconductor
 2sk3192.pdf 

isc N-Channel MOSFET Transistor 2SK3192 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 68m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d