2SK3325-ZJ MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3325-ZJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 190 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO263
2SK3325-ZJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3325-ZJ Datasheet (PDF)
2sk3325 2sk3325-s 2sk3325-zj.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3325SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK3325 is N-Channel DMOS FET device that featuresPART NUMBER PACKAGEa low gate charge and excellent switching characteristics, and2SK3325 TO-220ABdesigned for high voltage applications such as switching power2SK3325-S TO-262supply, AC adapter.
2sk3325-zj.pdf
isc N-Channel MOSFET Transistor 2SK3325-ZJFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk3325-s.pdf
isc N-Channel MOSFET Transistor 2SK3325-SFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk3325.pdf
SMD Type ICSMD Type TransistorsMOS Field Effect Transistor2SK3325TO-263Unit: mm+0.2Features4.57-0.21.27+0.1-0.1Low gate charge:QG = 22 nC TYP. (VDD = 400 V, VGS =10V, ID =10A)Gate voltage rating: 30 VLow on-state resistance0.1max1.27+0.1-0.1RDS(on) =0.85MAX. (VGS =10V, ID =5.0 A)+0.1Avalanche capability ratings0.81-0.12.541Gate2.54+0.2 +0.2-0.
2sk3325.pdf
isc N-Channel MOSFET Transistor 2SK3325FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
