All MOSFET. FCI25N60NF102 Equivalents Search

 

FCI25N60NF102 Spec and Replacement


   Type Designator: FCI25N60NF102
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 216 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: TO262 I2PAK

 FCI25N60NF102 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCI25N60NF102 Specs

 5.1. Size:598K  fairchild semi
 fci25n60n.pdf pdf_icon

FCI25N60NF102

November 2013 FCI25N60N N-Channel SupreMOS MOSFET 600 V, 25 A, 125 m Features Description The SupreMOS MOSFET is Fairchild Semiconductor s next RDS(on) = 107 m (Typ.) @ VGS = 10 V, ID = 12.5 A generation of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 57 nC) employing a deep trench filling process that differentiates it from Low Ef... See More ⇒

 5.2. Size:421K  fairchild semi
 fci25n60n f102.pdf pdf_icon

FCI25N60NF102

June 2010 TM SupreMOS FCI25N60N_F102 tm N-Channel MOSFET 600V, 25A, 0.125 Features Description RDS(on) = 0.107 ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 57nC) process that differentiates it from preceding multi-epi based tech-... See More ⇒

Detailed specifications: FCH47N60N , STU650S , FCH47N60NF , STU630S , FCH76N60N , STU624S , FCH76N60NF , STU622S , 12N60 , STU618S , FCI7N60 , STU616S , FCP11N60F , STU612D , FCP11N60N , STU610S , FCP13N60N .

Keywords - FCI25N60NF102 MOSFET specs

 FCI25N60NF102 cross reference
 FCI25N60NF102 equivalent finder
 FCI25N60NF102 lookup
 FCI25N60NF102 substitution
 FCI25N60NF102 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 
Back to Top

 


 
.