FCI25N60NF102 Datasheet. Specs and Replacement

Type Designator: FCI25N60NF102  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 216 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: TO262 I2PAK

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FCI25N60NF102 datasheet

 5.1. Size:598K  fairchild semi
 fci25n60n.pdf pdf_icon

FCI25N60NF102

November 2013 FCI25N60N N-Channel SupreMOS MOSFET 600 V, 25 A, 125 m Features Description The SupreMOS MOSFET is Fairchild Semiconductor s next RDS(on) = 107 m (Typ.) @ VGS = 10 V, ID = 12.5 A generation of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 57 nC) employing a deep trench filling process that differentiates it from Low Ef... See More ⇒

 5.2. Size:421K  fairchild semi
 fci25n60n f102.pdf pdf_icon

FCI25N60NF102

June 2010 TM SupreMOS FCI25N60N_F102 tm N-Channel MOSFET 600V, 25A, 0.125 Features Description RDS(on) = 0.107 ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 57nC) process that differentiates it from preceding multi-epi based tech-... See More ⇒

Detailed specifications: FCH47N60N, STU650S, FCH47N60NF, STU630S, FCH76N60N, STU624S, FCH76N60NF, STU622S, 12N60, STU618S, FCI7N60, STU616S, FCP11N60F, STU612D, FCP11N60N, STU610S, FCP13N60N

Keywords - FCI25N60NF102 MOSFET specs

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