70N06L-TQ2 Datasheet and Replacement

70N06L-TQ2www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Sour

IPB070N06L G IPP070N06L G Power-TransistorProduct SummaryFeaturesV D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?>R 7 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C

LTP70N06P N-Channel 60V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 60 V, Switching RDS(ON ) = 11.5 m, DC-DC converter and DC motor control Typ = 9 m UPS ID = 80 A Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Symbol Limit Unit

May 2001TMQFETFQA170N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 170A, 60V, RDS(on) = 0.0056 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 220 nC)planar stripe, DMOS technology. Low Crss ( typical 620 pF)This advanced technology has been especially tailore

RFG70N06, RFP70N06, RF1S70N06,RF1S70N06SMData Sheet February 200570A, 60V, 0.014 Ohm, N-Channel Power FeaturesMOSFETs 70A, 60VThese are N-Channel power MOSFETs manufactured using rDS(on) = 0.014the MegaFET process. This process, which uses feature Temperature Compensated PSPICE Modelsizes approaching those of LSI circuits, gives optimum utilization of silic

RFG70N06, RFP70N06, RF1S70N06,RF1S70N06SMData Sheet February 200570A, 60V, 0.014 Ohm, N-Channel Power FeaturesMOSFETs 70A, 60VThese are N-Channel power MOSFETs manufactured using rDS(on) = 0.014the MegaFET process. This process, which uses feature Temperature Compensated PSPICE Modelsizes approaching those of LSI circuits, gives optimum utilization of silic

Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.012 Rugged Gate Oxide Technology Lower Input CapacitanceID = 70 A Improved Gate Charge Extended Safe Operating AreaTO-220 Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.009 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

SUP/SUB70N06-14Vishay SiliconixN-Channel 60-V (D-S), 175 C MOSFETPRODUCT SUMMARY V(BR)DSS (V) rDS(on) ()ID (A)Pb-free60 0.014 Available70aRoHS*COMPLIANTTO-220AB DTO-263GDRAIN connected to TABG D STop ViewG D SSSUB70N06-14Top ViewN-Channel MOSFETSUP70N06-14Ordering Information: SUB70N06-14 SUB70N06-14-E3 (Lead (Pb)-free) SUP70N06-14-E3 (Lead (P

IPB070N06N G IPP070N06N GIPI070N06N G Power-TransistorProduct SummaryFeaturesV D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@BR 7 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C >?A=1

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Ordering number : ENA2250 NDBA170N06A N-Channel Power MOSFEThttp://onsemi.com 60V, 170A, 3.3m, TO-263 Features On-resistance RDS(on)=2.5m(typ.) Electrical Connection Input Capacitance Ciss=15800pF(typ.) N-channel Halogen free compliance D(2, 4)Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Value UnitG(1)V Drain to Sourc

UNISONIC TECHNOLOGIES CO., LTD 70N06 Power MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The UTC 70N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching 1TO-262speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) = 15m@VGS = 10 V

RFF70N06Data Sheet March 1999 File Number 4073.225A, 60V, 0.025 Ohm, N-Channel Power FeaturesMOSFET 25A, 60VThe RFF70N06 N-Channel power MOSFET is manufactured rDS(ON) = 0.025using the MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI circuits givesoptimum utilization of silicon, resulting

KF70N06P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF70N06PAIts mainly suitable for low viltage applications such as automotive, OCDC/DC converters and a load switch in battery powered applicationsFE DIM MILLIMETERSG_+A 9.9 0.2BB 15.95 MAXFEATURES QC 1.3+0.1/-0.05_VDSS= 60V, ID= 70A (KF70N06P) I+D 0

BR70N06(BRCS70N06R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features R C DS(on) rssLow RDS(on), low gate charge, low Crss, fast switching. / Applications DC/DC

Shantou Huashan Electronic Devices Co.,Ltd. HFP70N06 N-Channel Enhancement Mode Field Effect Transistor Applications TO-220 Servo motor control. Power MOSFET gate drivers. DC/DC converters Other switching applications. 1- G 2-D 3-S Features 70A, 60V(See Note), RDS(on)

SEMICONDUCTORFTK70N06TECHNICAL DATA60V N-Channel MOSFETBVDSS = 60 VRDS(on) = 15 mFeaturesID = 70 ARDS(on) (Max 0.015 )@VGS =10VGate Charge (Typical 39nC)TO-220 Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested123Maximum Junction Temperature Range (175C)1.Gate 2. Drain 3. SourceDGSAbsolute Maximum Ratings TC

SMD Type MOSFETTransistorsN-Channel Trench Power MOSFETNDT70N06TO-252Unit: mm Features+0.156.50-0.15+0.12.30 -0.1 VDS = 60V; ID = 88A +0.25.30-0.2 +0.80.50 -0.7 RDS(ON) 6.6m (VGS = 10V) Ultra Low On-Resistance High UIS and UIS 100% Test0.127+0.10.80-0.1max+ 0.11Gate2.3 0.60- 0.1+0.154.60 -0.152Drain3Source Absolute Maximum Ratings Ta =

WFP70N06WFP70N06WFP70N06WFP70N06Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 70A,60V, RDS(on)(Max0.014)@VGS=10V Ultra-low Gate charge(Typical 70nC) Low Crss (Typical 160pF) Improved dv/dt capability 100%Avalanche Tested Maximum Junction Temperature Range(175)General DescriptionThi

SFP70N06SFP70N06SFP70N06SFP70N06Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 70A,60V, R (Max0.014)@V =10VDS(on) GS Ultra-low Gate charge(Typical 70nC) Low Crss (Typical 160pF) Improved dv/dt capability 100%Avalanche Tested Maximum Junction Temperature Range(175)General Description

WFP70N06TWFP70N06TWFP70N06TWFP70N06TSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 68A,60V, R (Max18m)@V =10VDS(on) GS Ultra-low Gate charge(Typical 20nC) Improved dv/dt capability 100%Avalanche Tested Maximum Junction Temperature Range(175)General DescriptionThis Power MOSFET is produ

LTP70N06 N-Channel 60V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 60 V, Switching RDS(ON ) = 14 m, DC-DC converter and DC motor control Typ = 10 m UPS ID = 70 A Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Symbol Limit Unit

December 2014 BVDSS = 60 V RDS(on) typ = 5.6m HRP70N06K ID = 80 A 60V N-Channel Trench MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 100 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 5.6 m (Typ.)

December 2014BVDSS = 60 VRDS(on) typ HRS70N06K ID = 80 A60V N-Channel Trench MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 100 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 5.6 (Typ.) @VGS=10V 100% Avalanche Test

S70N06R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=70V,ID=57A DC Motor Control Rds(on)(typ)=11.5m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD

INCHANGE Semiconductorisc N-Channel MOSFET Transistor RFP70N06DESCRIPTIONDrain Current I =70A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 14m(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS Designed for use in applications such as sw

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 70N06DESCRIPTIONDrain Current I =70A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 14m(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in applications such as swithi

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor RFG70N06FEATURESWith TO-247 packagingUIS rating curvePeak current vs pulse width curveHigh power and current handling capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applicationsABSOLUTE MAXIMUM RATIN

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 70N06DESCRIPTIONDrain Current I =70A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 14m(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in applications such as swithi