70N06L-TQ2 - описание и поиск аналогов

70N06L-TQ2 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 60 60 0.013 at VGS = 4.5 V 50 D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VGS Gate-Sour

LTP70N06P N-Channel 60V Power MOSFET Features Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 60 V, Switching RDS(ON ) = 11.5 m , DC-DC converter and DC motor control Typ = 9 m UPS ID = 80 A Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Symbol Limit Unit

May 2001 TM QFET FQA170N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 170A, 60V, RDS(on) = 0.0056 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 220 nC) planar stripe, DMOS technology. Low Crss ( typical 620 pF) This advanced technology has been especially tailore

RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Data Sheet February 2005 70A, 60V, 0.014 Ohm, N-Channel Power Features MOSFETs 70A, 60V These are N-Channel power MOSFETs manufactured using rDS(on) = 0.014 the MegaFET process. This process, which uses feature Temperature Compensated PSPICE Model sizes approaching those of LSI circuits, gives optimum utilization of silic

RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Data Sheet February 2005 70A, 60V, 0.014 Ohm, N-Channel Power Features MOSFETs 70A, 60V These are N-Channel power MOSFETs manufactured using rDS(on) = 0.014 the MegaFET process. This process, which uses feature Temperature Compensated PSPICE Model sizes approaching those of LSI circuits, gives optimum utilization of silic

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.012 Rugged Gate Oxide Technology Lower Input Capacitance ID = 70 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.009 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

SUP/SUB70N06-14 Vishay Siliconix N-Channel 60-V (D-S), 175 C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) ( )ID (A) Pb-free 60 0.014 Available 70a RoHS* COMPLIANT TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N06-14 Top View N-Channel MOSFET SUP70N06-14 Ordering Information SUB70N06-14 SUB70N06-14-E3 (Lead (Pb)-free) SUP70N06-14-E3 (Lead (P

IPB070N06N G IPP070N06N G IPI070N06N G Power-Transistor Product Summary Features V D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@B R 7 m , ?> =1G ,' E5AB9?> P ( 381>>581>35=5>C >?A=1

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Ordering number ENA2250 NDBA170N06A N-Channel Power MOSFET http //onsemi.com 60V, 170A, 3.3m , TO-263 Features On-resistance RDS(on)=2.5m (typ.) Electrical Connection Input Capacitance Ciss=15800pF(typ.) N-channel Halogen free compliance D(2, 4) Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Value Unit G(1) V Drain to Sourc

UNISONIC TECHNOLOGIES CO., LTD 70N06 Power MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 70N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching 1 TO-262 speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) = 15m @VGS = 10 V

RFF70N06 Data Sheet March 1999 File Number 4073.2 25A, 60V, 0.025 Ohm, N-Channel Power Features MOSFET 25A , 60V The RFF70N06 N-Channel power MOSFET is manufactured rDS(ON) = 0.025 using the MegaFET process. This process, which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting

KF70N06P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF70N06P A It s mainly suitable for low viltage applications such as automotive, O C DC/DC converters and a load switch in battery powered applications F E DIM MILLIMETERS G _ + A 9.9 0.2 B B 15.95 MAX FEATURES Q C 1.3+0.1/-0.05 _ VDSS= 60V, ID= 70A (KF70N06P) I + D 0

BR70N06(BRCS70N06R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features R C DS(on) rss Low RDS(on), low gate charge, low Crss, fast switching. / Applications DC/DC

Shantou Huashan Electronic Devices Co.,Ltd. HFP70N06 N-Channel Enhancement Mode Field Effect Transistor Applications TO-220 Servo motor control. Power MOSFET gate drivers. DC/DC converters Other switching applications. 1- G 2-D 3-S Features 70A, 60V(See Note), RDS(on)

SEMICONDUCTOR FTK70N06 TECHNICAL DATA 60V N-Channel MOSFET BVDSS = 60 V RDS(on) = 15 m Features ID = 70 A RDS(on) (Max 0.015 )@VGS =10V Gate Charge (Typical 39nC) TO-220 Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested 1 2 3 Maximum Junction Temperature Range (175 C) 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC

SMD Type MOSFET Transistors N-Channel Trench Power MOSFET NDT70N06 TO-252 Unit mm Features +0.15 6.50-0.15 +0.1 2.30 -0.1 VDS = 60V; ID = 88A +0.2 5.30-0.2 +0.8 0.50 -0.7 RDS(ON) 6.6m (VGS = 10V) Ultra Low On-Resistance High UIS and UIS 100% Test 0.127 +0.1 0.80-0.1 max + 0.1 1Gate 2.3 0.60- 0.1 +0.15 4.60 -0.15 2Drain 3Source Absolute Maximum Ratings Ta =

WFP70N06 WFP70N06 WFP70N06 WFP70N06 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 70A,60V, RDS(on)(Max0.014 )@VGS=10V Ultra-low Gate charge(Typical 70nC) Low Crss (Typical 160pF) Improved dv/dt capability 100%Avalanche Tested Maximum Junction Temperature Range(175 ) General Description Thi

SFP70N06 SFP70N06 SFP70N06 SFP70N06 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 70A,60V, R (Max0.014 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 70nC) Low Crss (Typical 160pF) Improved dv/dt capability 100%Avalanche Tested Maximum Junction Temperature Range(175 ) General Description

WFP70N06T WFP70N06T WFP70N06T WFP70N06T Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 68A,60V, R (Max18m )@V =10V DS(on) GS Ultra-low Gate charge(Typical 20nC) Improved dv/dt capability 100%Avalanche Tested Maximum Junction Temperature Range(175 ) General Description This Power MOSFET is produ

LTP70N06 N-Channel 60V Power MOSFET Features Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 60 V, Switching RDS(ON ) = 14 m , DC-DC converter and DC motor control Typ = 10 m UPS ID = 70 A Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Symbol Limit Unit

December 2014 BVDSS = 60 V RDS(on) typ = 5.6m HRP70N06K ID = 80 A 60V N-Channel Trench MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 100 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 5.6 m (Typ.)

December 2014 BVDSS = 60 V RDS(on) typ HRS70N06K ID = 80 A 60V N-Channel Trench MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 100 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 5.6 (Typ.) @VGS=10V 100% Avalanche Test

60V, 9.2A, 18m N-channel Power Trench MOSFET JMTP170N06D Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V Halogen-free; RoHS-compliant VGS(th)_Typ 1.6 V Pb-free plating ID(@VGS=10V) 9.2 A RDS(ON)_Typ(@VGS=10V 16.7 mW Applications RDS(ON)_Typ(@VGS=4.5V 18.3 mW Load Switch PWM Application

JMTG070N06A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V, 70A Load Switch R

JMTP170N06A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V, 10A Load Switch R

S70N06R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=70V,ID=57A DC Motor Control Rds(on)(typ)=11.5m @Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D D G G G G G D D D

INCHANGE Semiconductor isc N-Channel MOSFET Transistor RFP70N06 DESCRIPTION Drain Current I =70A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 14m (Max) DS(on) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in applications such as sw

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 70N06 DESCRIPTION Drain Current I =70A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 14m (Max) DS(on) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in applications such as swithi

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor RFG70N06 FEATURES With TO-247 packaging UIS rating curve Peak current vs pulse width curve High power and current handling capability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications ABSOLUTE MAXIMUM RATIN

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 70N06 DESCRIPTION Drain Current I =70A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 14m (Max) DS(on) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in applications such as swithi

AP70N06HD 60V N-Channel Enhancement Mode MOSFET Description The AP70N06HD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =70A DS D R