All MOSFET. 80N10 Datasheet

 

80N10 Datasheet and Replacement


   Type Designator: 80N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 665 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO220AB
      - MOSFET Cross-Reference Search

 

80N10 Datasheet (PDF)

 ..1. Size:832K  cn vbsemi
80n10.pdf pdf_icon

80N10

80N10www.VBsemi.twN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Maximum Junction Temperature0.0085 at VGS = 10 V100100 Compliant to RoHS Directive 2002/95/EC0.010 at VGS = 6 V85TO-220ABDGSN-Channel MOSFETG D S ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise notedPa

 0.1. Size:928K  1
gt080n10d5.pdf pdf_icon

80N10

GOFORDGT080N10N-Channel Enhancement Mode Power MOSFETDescriptionThe GT080N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 100V ID (at VGS = 10V) 75A RDS(ON) (at VGS = 10V)

 0.2. Size:495K  1
s80n10r s80n10s.pdf pdf_icon

80N10

SI-TECH SEMICONDUCTOR CO.,LTD S80N10R/S N-Channel MOSFET Features 80V,100A,Rds(on)(typ)=5.8m @Vgs=10V High Ruggedness Fast Switching 100% Avalanche Tested Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Techs advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-st

 0.3. Size:923K  st
sth180n10f3-6.pdf pdf_icon

80N10

STH180N10F3-6N-channel 100 V, 3.9 m, 180 A, HPAK-6STripFETIII Power MOSFETFeaturesRDS(on) Order codes VDSS IDTABmax.STH180N10F3-6 100 V 4.5 m 180 A Ultra low on-resistance7 100% avalanche tested1ApplicationsH2PAK-6 High current switching applicationsDescriptionThis device is an N-channel enhancement mode Figure 1. Internal schematic diagra

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FTK84D | SVGP20110NSTR | WSF3040 | MXP4004AT | IPI200N15N3 | IRFN044 | MEE42942-G

Keywords - 80N10 MOSFET datasheet

 80N10 cross reference
 80N10 equivalent finder
 80N10 lookup
 80N10 substitution
 80N10 replacement

 

 
Back to Top

 


 
.