All MOSFET. AF2301PWL Datasheet

 

AF2301PWL MOSFET. Datasheet pdf. Equivalent


   Type Designator: AF2301PWL
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035(typ) Ohm
   Package: SOT23

 AF2301PWL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AF2301PWL Datasheet (PDF)

 ..1. Size:2936K  cn vbsemi
 af2301pwl.pdf

AF2301PWL AF2301PWL

AF2301PWLwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

 7.1. Size:133K  anachip
 af2301p.pdf

AF2301PWL AF2301PWL

AF2301P20V P-Channel Enhancement Mode MOSFET Features Product Summary - Advanced trench process technology VDS = - 20V - High density cell design for ultra low on-resistance RDS (on), VGS@-4.5V, IDS@-2.8A =130m. - Excellent thermal and electrical capabilities RDS (on), VGS@-2.5V, IDS@-2.0A =190m. - Compact and low profile SOT-23 package Pin Descriptions Pin Assignments

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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