AF2301PWL MOSFET Datasheet: P-Ch, 20V, 4.5A. Full specification with pinout and replacement list

AF2301PWL Specs and Replacement

Type Designator: AF2301PWL

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 typ Ohm

Package: SOT23

AF2301PWL substitution

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AF2301PWL datasheet

..1. Size:2936K cn vbsemi
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AF2301PWL www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS ... See More ⇒

7.1. Size:133K anachip
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AF2301P 20V P-Channel Enhancement Mode MOSFET Features Product Summary - Advanced trench process technology VDS = - 20V - High density cell design for ultra low on-resistance RDS (on), VGS@-4.5V, IDS@-2.8A =130m . - Excellent thermal and electrical capabilities RDS (on), VGS@-2.5V, IDS@-2.0A =190m . - Compact and low profile SOT-23 package Pin Descriptions Pin Assignments... See More ⇒

Detailed specifications: 2SK2158-T1B, 30N06L, 30N06-TO220, 30N06-TO252, 30N20, 30P06, 70N06L-TQ2, 80N10, AON7506, AF4502CSLA, AFN3404S23RG, AFN4172WSS8, AFP2307AS23, AM20P06-135, AM2319P-T1, AM2336N-T1, AM2339P-T1