All MOSFET. AF2301PWL Datasheet

 

AF2301PWL Datasheet and Replacement


   Type Designator: AF2301PWL
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035(typ) Ohm
   Package: SOT23
 

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AF2301PWL Datasheet (PDF)

 ..1. Size:2936K  cn vbsemi
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AF2301PWL

AF2301PWLwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

 7.1. Size:133K  anachip
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AF2301PWL

AF2301P20V P-Channel Enhancement Mode MOSFET Features Product Summary - Advanced trench process technology VDS = - 20V - High density cell design for ultra low on-resistance RDS (on), VGS@-4.5V, IDS@-2.8A =130m. - Excellent thermal and electrical capabilities RDS (on), VGS@-2.5V, IDS@-2.0A =190m. - Compact and low profile SOT-23 package Pin Descriptions Pin Assignments

Datasheet: 2SK2158-T1B , 30N06L , 30N06-TO220 , 30N06-TO252 , 30N20 , 30P06 , 70N06L-TQ2 , 80N10 , IRFP250 , AF4502CSLA , AFN3404S23RG , AFN4172WSS8 , AFP2307AS23 , AM20P06-135 , AM2319P-T1 , AM2336N-T1 , AM2339P-T1 .

History: SIHF730 | UT5504 | MMN8822 | TPC65R360M | AP6N6R5LMT-L | P1060ETF | BUZ73A

Keywords - AF2301PWL MOSFET datasheet

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