All MOSFET. AP2306AGN Datasheet

 

AP2306AGN MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP2306AGN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 5.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.5 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOT23

 AP2306AGN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP2306AGN Datasheet (PDF)

 ..1. Size:848K  cn vbsemi
ap2306agn.pdf

AP2306AGN
AP2306AGN

AP2306AGNwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

 0.1. Size:106K  ape
ap2306agn-hf.pdf

AP2306AGN
AP2306AGN

AP2306AGN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 30V Lower on-resistance D RDS(ON) 35m Surface mount package ID 5A RoHS CompliantSDSOT-23GDescriptionAdvanced Power MOSFETs utilized advanced processing techniquesGto achieve the lowest possible on-resistance, extreme

 6.1. Size:95K  ape
ap2306agen-hf.pdf

AP2306AGN
AP2306AGN

AP2306AGEN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 50m Surface Mount Device ID 4.1AS RoHS Compliant & Halogen-FreeSOT-23 GDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toDachieve the lowest possible on-res

 6.2. Size:179K  ape
ap2306agen.pdf

AP2306AGN
AP2306AGN

AP2306AGEN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 50m Surface Mount Device ID 4.1AS RoHS Compliant & Halogen-FreeSOT-23 GDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toDachieve the lowest possible on-res

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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