All MOSFET. FCP36N60N Datasheet

 

FCP36N60N Datasheet and Replacement


   Type Designator: FCP36N60N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 86 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO220
 
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FCP36N60N Datasheet (PDF)

 ..1. Size:408K  fairchild semi
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FCP36N60N

November 2010SupreMOSTMFCP36N60NtmN-Channel MOSFET 600V, 36A, 90mFeatures Description RDS(on) = 81m ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 86nC)process that differentiates it from preceding multi-epi based technologies.

 ..2. Size:953K  onsemi
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FCP36N60N

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:207K  inchange semiconductor
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FCP36N60N

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCP36N60NFEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMU

 9.1. Size:422K  onsemi
fcp360n65s3r0.pdf pdf_icon

FCP36N60N

FCP360N65S3R0MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 10 A, 360 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailor

Datasheet: FCP13N60N , STU609S , FCP16N60N , STU608S , FCP22N60N , STU606S , FCP25N60NF102 , STU602S , NCEP15T14 , STU6025NL2 , FCP4N60 , STU434S , FCP7N60 , STU432S , FCP9N60N , STU432L , FCPF11N60NT .

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