All MOSFET. CEG8205 Datasheet

 

CEG8205 Datasheet and Replacement


   Type Designator: CEG8205
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 330 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: TSSOP8
 

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CEG8205 Datasheet (PDF)

 ..1. Size:727K  cn vbsemi
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CEG8205

CEG8205www.VBsemi.twDual N-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.022 at VGS = 4.5 V Available6.625RoHS*0.032 at VGS = 2.5 V 5.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RATIN

 0.1. Size:434K  cet
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CEG8205

CEG8205ADual N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 6A, RDS(ON) = 25m @VGS = 4.5V. RDS(ON) = 35m @VGS = 2.5V.Super High dense cell design for extremely low RDS(ON).High power and current handing capability.D 1 8 DLead free product is acquired.2 7 S2S1TSSOP-8 for Surface Mount Package.S1 3 6 S24G1 5 G2G2S2S2G1DS1S1DTSSOP

 8.1. Size:413K  cet
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CEG8205

CEG8208Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESD D20V, 6.5A, RDS(ON) = 22m @VGS = 4.5V. RDS(ON) = 32m @VGS = 2.5V.*1K *1KSuper High dense cell design for extremely low RDS(ON).G1 G2High power and current handing capability.Lead free product is acquired.S1 S2TSSOP-8 for Surface Mount Package.*Typical value by design ESD Protected: HBM 2000

Datasheet: APM8010KC , APM9435KC , APM9945KC , BSC019N04NS , BUK9832-55 , C3028LD , CEA3055 , CEA3055L , IRF1010E , CEM4936 , CEM4946 , CEM9926 , CEM9956A , CEU20N06 , CEU50N06 , CHMP830JGP , CMD20N06L .

History: SSF2627 | TSM3548DCX6 | APT97N65LC6 | DMP1012UCB9 | TPCF8002 | SIHFBC30A | SM6107PSU

Keywords - CEG8205 MOSFET datasheet

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