CEG8205 Datasheet and Replacement
Type Designator: CEG8205
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 330 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: TSSOP8
CEG8205 substitution
CEG8205 Datasheet (PDF)
ceg8205.pdf

CEG8205www.VBsemi.twDual N-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.022 at VGS = 4.5 V Available6.625RoHS*0.032 at VGS = 2.5 V 5.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RATIN
ceg8205a.pdf

CEG8205ADual N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 6A, RDS(ON) = 25m @VGS = 4.5V. RDS(ON) = 35m @VGS = 2.5V.Super High dense cell design for extremely low RDS(ON).High power and current handing capability.D 1 8 DLead free product is acquired.2 7 S2S1TSSOP-8 for Surface Mount Package.S1 3 6 S24G1 5 G2G2S2S2G1DS1S1DTSSOP
ceg8208.pdf

CEG8208Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESD D20V, 6.5A, RDS(ON) = 22m @VGS = 4.5V. RDS(ON) = 32m @VGS = 2.5V.*1K *1KSuper High dense cell design for extremely low RDS(ON).G1 G2High power and current handing capability.Lead free product is acquired.S1 S2TSSOP-8 for Surface Mount Package.*Typical value by design ESD Protected: HBM 2000
Datasheet: APM8010KC , APM9435KC , APM9945KC , BSC019N04NS , BUK9832-55 , C3028LD , CEA3055 , CEA3055L , IRF1010E , CEM4936 , CEM4946 , CEM9926 , CEM9956A , CEU20N06 , CEU50N06 , CHMP830JGP , CMD20N06L .
History: MTM232270LBF | HM120N03 | AP65SL380DI
Keywords - CEG8205 MOSFET datasheet
CEG8205 cross reference
CEG8205 equivalent finder
CEG8205 lookup
CEG8205 substitution
CEG8205 replacement
History: MTM232270LBF | HM120N03 | AP65SL380DI



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