CEG8205 - аналоги, параметры транзистора - Справочник транзисторов

CEG8205 даташит

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CEG8205 www.VBsemi.tw Dual N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.022 at VGS = 4.5 V Available 6.6 25 RoHS* 0.032 at VGS = 2.5 V 5.5 COMPLIANT D D TSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G2 1 3 6 2 G 1 4 G 2 5 S1 S2 Top View ABSOLUTE MAXIMUM RATIN

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CEG8205A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6A, RDS(ON) = 25m @VGS = 4.5V. RDS(ON) = 35m @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. D 1 8 D Lead free product is acquired. 2 7 S2 S1 TSSOP-8 for Surface Mount Package. S1 3 6 S2 4 G1 5 G2 G2 S2 S2 G1 D S1 S1 D TSSOP

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CEG8208 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES D D 20V, 6.5A, RDS(ON) = 22m @VGS = 4.5V. RDS(ON) = 32m @VGS = 2.5V. *1K *1K Super High dense cell design for extremely low RDS(ON). G1 G2 High power and current handing capability. Lead free product is acquired. S1 S2 TSSOP-8 for Surface Mount Package. *Typical value by design ESD Protected HBM 2000

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