All MOSFET. CEU50N06 Datasheet

 

CEU50N06 Datasheet and Replacement


   Type Designator: CEU50N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO252
 

 CEU50N06 substitution

   - MOSFET ⓘ Cross-Reference Search

 

CEU50N06 Datasheet (PDF)

 ..1. Size:827K  cn vbsemi
 ceu50n06.pdf pdf_icon

CEU50N06

CEU50N06www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit U

Datasheet: CEA3055 , CEA3055L , CEG8205 , CEM4936 , CEM4946 , CEM9926 , CEM9956A , CEU20N06 , 2SK3568 , CHMP830JGP , CMD20N06L , CMD20P03 , CMD50N06B , CMD50P03 , CMD5950 , CMN2305M , CMU12N10 .

History: AOD4104

Keywords - CEU50N06 MOSFET datasheet

 CEU50N06 cross reference
 CEU50N06 equivalent finder
 CEU50N06 lookup
 CEU50N06 substitution
 CEU50N06 replacement

 

 
Back to Top

 


 
.