CEU50N06 PDF and Equivalents Search

 

CEU50N06 Specs and Replacement

Type Designator: CEU50N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 470 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO252

CEU50N06 substitution

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CEU50N06 datasheet

 ..1. Size:827K  cn vbsemi
 ceu50n06.pdf pdf_icon

CEU50N06

CEU50N06 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit U... See More ⇒

Detailed specifications: CEA3055, CEA3055L, CEG8205, CEM4936, CEM4946, CEM9926, CEM9956A, CEU20N06, 4435, CHMP830JGP, CMD20N06L, CMD20P03, CMD50N06B, CMD50P03, CMD5950, CMN2305M, CMU12N10

Keywords - CEU50N06 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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