CHMP830JGP PDF and Equivalents Search

 

CHMP830JGP Specs and Replacement

Type Designator: CHMP830JGP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 typ Ohm

Package: SO8

CHMP830JGP substitution

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CHMP830JGP datasheet

 ..1. Size:1361K  cn vbsemi
 chmp830jgp.pdf pdf_icon

CHMP830JGP

CHMP830JGP www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D... See More ⇒

 0.1. Size:124K  chenmko
 chmp830jgp-a.pdf pdf_icon

CHMP830JGP

CHENMKO ENTERPRISE CO.,LTD CHMP830JGP-A SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * Rugged and rel... See More ⇒

Detailed specifications: CEA3055L, CEG8205, CEM4936, CEM4946, CEM9926, CEM9956A, CEU20N06, CEU50N06, SPP20N60C3, CMD20N06L, CMD20P03, CMD50N06B, CMD50P03, CMD5950, CMN2305M, CMU12N10, CPH3427-TL

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