All MOSFET. CHMP830JGP Datasheet

 

CHMP830JGP Datasheet and Replacement


   Type Designator: CHMP830JGP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018(typ) Ohm
   Package: SO8
 

 CHMP830JGP substitution

   - MOSFET ⓘ Cross-Reference Search

 

CHMP830JGP Datasheet (PDF)

 ..1. Size:1361K  cn vbsemi
 chmp830jgp.pdf pdf_icon

CHMP830JGP

CHMP830JGPwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D

 0.1. Size:124K  chenmko
 chmp830jgp-a.pdf pdf_icon

CHMP830JGP

CHENMKO ENTERPRISE CO.,LTDCHMP830JGP-ASURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged and rel

Datasheet: CEA3055L , CEG8205 , CEM4936 , CEM4946 , CEM9926 , CEM9956A , CEU20N06 , CEU50N06 , AON7410 , CMD20N06L , CMD20P03 , CMD50N06B , CMD50P03 , CMD5950 , CMN2305M , CMU12N10 , CPH3427-TL .

History: ME2308S | CEU540N | OSG65R099KT3ZF | FQB19N20LTM | ISL9N310AD3ST | AP6970GN2-HF | APT50M65B2LLG

Keywords - CHMP830JGP MOSFET datasheet

 CHMP830JGP cross reference
 CHMP830JGP equivalent finder
 CHMP830JGP lookup
 CHMP830JGP substitution
 CHMP830JGP replacement

 

 
Back to Top

 


 
.