CMN2305M PDF and Equivalents Search

 

CMN2305M Specs and Replacement

Type Designator: CMN2305M

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 typ Ohm

Package: SOT23

CMN2305M substitution

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CMN2305M datasheet

 ..1. Size:870K  cn vbsemi
 cmn2305m.pdf pdf_icon

CMN2305M

CMN2305M www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATION... See More ⇒

Detailed specifications: CEU20N06, CEU50N06, CHMP830JGP, CMD20N06L, CMD20P03, CMD50N06B, CMD50P03, CMD5950, 5N65, CMU12N10, CPH3427-TL, CSD17301Q5, D10PF06, D4NK50Z-TO252, DMC2038LVT-7-F, DMC2700UDM-7, DMC3018LSD-13

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