All MOSFET. CMN2305M Datasheet

 

CMN2305M Datasheet and Replacement


   Type Designator: CMN2305M
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035(typ) Ohm
   Package: SOT23
 

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CMN2305M Datasheet (PDF)

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CMN2305M

CMN2305Mwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATION

Datasheet: CEU20N06 , CEU50N06 , CHMP830JGP , CMD20N06L , CMD20P03 , CMD50N06B , CMD50P03 , CMD5950 , 4435 , CMU12N10 , CPH3427-TL , CSD17301Q5 , D10PF06 , D4NK50Z-TO252 , DMC2038LVT-7-F , DMC2700UDM-7 , DMC3018LSD-13 .

History: H7N1009MD90TZ | IXFH102N15T | FTK10N65DD | DMN66D0LDW | AO4822A | SI1499DH | IPW60R199CP

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