D10PF06 Datasheet and Replacement
Type Designator: D10PF06
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.061(typ) Ohm
Package: TO252
D10PF06 substitution
D10PF06 Datasheet (PDF)
d10pf06.pdf

D10PF06www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symbo
std10pf06-1 std10pf06t4.pdf

STD10PF06P-CHANNEL 60V - 0.18 - 10A IPAK/DPAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTD10PF06 60 V
std10pf06.pdf

STD10PF06P-CHANNEL 60V - 0.18 - 10A IPAK/DPAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTD10PF06 60 V
std10pf06t4.pdf

STD10PF06T4www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter S
Datasheet: CMD20P03 , CMD50N06B , CMD50P03 , CMD5950 , CMN2305M , CMU12N10 , CPH3427-TL , CSD17301Q5 , AO4407 , D4NK50Z-TO252 , DMC2038LVT-7-F , DMC2700UDM-7 , DMC3018LSD-13 , DMG1013UW-7 , DMG3420U-7 , DMG6602S , DMG6968U-7 .
History: ME7820S-G | NCE0224AK | IXTK100N25P | ME2309-G | DMN2215UDM | IXTH41N25 | RSS075P03TB
Keywords - D10PF06 MOSFET datasheet
D10PF06 cross reference
D10PF06 equivalent finder
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D10PF06 substitution
D10PF06 replacement
History: ME7820S-G | NCE0224AK | IXTK100N25P | ME2309-G | DMN2215UDM | IXTH41N25 | RSS075P03TB



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