D4NK50Z-TO252 MOSFET. Datasheet pdf. Equivalent
Type Designator: D4NK50Z-TO252
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 48(max) nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 177 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
Package: TO252
D4NK50Z-TO252 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
D4NK50Z-TO252 Datasheet (PDF)
d4nk50z-to252.pdf
D4NK50Z TO252www.VBsemi.twPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 1.8RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to R
stp4nk50z stp4nk50zfp std4nk50z std4nk50z-1.pdf
STP4NK50Z - STP4NK50ZFPSTD4NK50Z - STD4NK50Z-1N-CHANNEL 500V - 2.4 - 3A TO-220/TO-220FP/DPAK/IPAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP4NK50Z 500 V
std4nk50zt4.pdf
STP4NK50Z - STP4NK50ZFPSTD4NK50Z - STD4NK50Z-1N-CHANNEL 500V - 2.4 - 3A TO-220/TO-220FP/DPAK/IPAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP4NK50Z 500 V
std4nk50zd std4nk50zd-1 stf4nk50zd stp4nk50zd.pdf
STD4NK50ZD - STD4NK50ZD-1STF4NK50ZD - STP4NK50ZDN-channel 500V - 2.4 - 3A - TO-220 - TO-220FP- DPAK - IPAKFast diode SuperMESH Power MOSFETGeneral features3Type VDSS RDS(on) ID Pw1STD4NK50ZD-1 500V
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
