DTM4926 Specs and Replacement
Type Designator: DTM4926
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 175 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 typ Ohm
Package: SO8
DTM4926 substitution
- MOSFET ⓘ Cross-Reference Search
DTM4926 datasheet
dtm4926.pdf
DTM4926 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.010 at VGS = 10 V 12 30 5.9 nC Optimized for High-Side Synchronous 0.012 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO... See More ⇒
dtm4946.pdf
DTM4946 www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channel ... See More ⇒
Detailed specifications: DMG6602S, DMG6968U-7, DMN4468LSS-13, DMN6040SK3-13, DMN6068LK3-13, DMN6068SE-13, DMP3025LK3-13, DMP3056LSD-13, RFP50N06, DTM4946, DTU09N03, E10P02, EMB60N06A, EMFA0P02J, F3055L-TO252, FDD390N15AL, FDD3N40TM
Keywords - DTM4926 MOSFET specs
DTM4926 cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: EMB60N06A | DTU09N03
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