DTU09N03 MOSFET. Datasheet pdf. Equivalent
Type Designator: DTU09N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 205 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 61 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 525 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005(typ) Ohm
Package: TO252
DTU09N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DTU09N03 Datasheet (PDF)
..1. Size:901K cn vbsemi
dtu09n03.pdf
dtu09n03.pdf
DTU09N03www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSOLU
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