DTU09N03 PDF and Equivalents Search

 

DTU09N03 Specs and Replacement

Type Designator: DTU09N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 205 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 525 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 typ Ohm

Package: TO252

DTU09N03 substitution

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DTU09N03 datasheet

 ..1. Size:901K  cn vbsemi
 dtu09n03.pdf pdf_icon

DTU09N03

DTU09N03 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.005 at VGS = 10 V 80 30 31 nC 0.006 at VGS = 4.5 V 68 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET ABSOLU... See More ⇒

Detailed specifications: DMN4468LSS-13, DMN6040SK3-13, DMN6068LK3-13, DMN6068SE-13, DMP3025LK3-13, DMP3056LSD-13, DTM4926, DTM4946, AO3407, E10P02, EMB60N06A, EMFA0P02J, F3055L-TO252, FDD390N15AL, FDD3N40TM, FDD8444-NL, FDD8580-6

Keywords - DTU09N03 MOSFET specs

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