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E10P02 Specs and Replacement

Type Designator: E10P02

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1.7 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: SO8

E10P02 substitution

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E10P02 datasheet

 ..1. Size:855K  cn vbsemi
e10p02.pdf pdf_icon

E10P02

E10P02 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Typical ES... See More ⇒

Detailed specifications: DMN6040SK3-13, DMN6068LK3-13, DMN6068SE-13, DMP3025LK3-13, DMP3056LSD-13, DTM4926, DTM4946, DTU09N03, 18N50, EMB60N06A, EMFA0P02J, F3055L-TO252, FDD390N15AL, FDD3N40TM, FDD8444-NL, FDD8580-6, FDN304P-NL

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