All MOSFET. E10P02 Datasheet

 

E10P02 Datasheet and Replacement


   Type Designator: E10P02
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1.7 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SO8
 

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E10P02 Datasheet (PDF)

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E10P02

E10P02www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Typical ES

Datasheet: DMN6040SK3-13 , DMN6068LK3-13 , DMN6068SE-13 , DMP3025LK3-13 , DMP3056LSD-13 , DTM4926 , DTM4946 , DTU09N03 , 75N75 , EMB60N06A , EMFA0P02J , F3055L-TO252 , FDD390N15AL , FDD3N40TM , FDD8444-NL , FDD8580-6 , FDN304P-NL .

History: NTLJD3119CTAG | PSMN005-75B

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