FDD8580-6 PDF and Equivalents Search

 

FDD8580-6 Specs and Replacement

Type Designator: FDD8580-6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 71 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 730 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO252

FDD8580-6 substitution

- MOSFET ⓘ Cross-Reference Search

 

FDD8580-6 datasheet

 ..1. Size:813K  cn vbsemi
fdd8580-6.pdf pdf_icon

FDD8580-6

FDD8580&-6 www.VBsemi.tw N-Channel 20-V (D-S)175 _C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a D 175_C Maximum Junction Temperature D 100% Rg Tested 0.006 @ VGS = 4.5 V 65 20 20 0.008 @ VGS = 2.5 V 45 D TO-252 G Drain Connected to Tab G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Par... See More ⇒

 7.1. Size:333K  fairchild semi
fdd8580 fdu8580.pdf pdf_icon

FDD8580-6

July 2006 FDD8580/FDU8580 tm N-Channel PowerTrench MOSFET 20V, 35A, 9m Features General Description This N-Channel MOSFET has been designed specifically Max rDS(on) = 9m at VGS = 10V, ID = 35A to improve the overall efficiency of DC/DC converters using Max rDS(on) =13m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWM controllers. It has been opti... See More ⇒

 7.2. Size:287K  inchange semiconductor
fdd8580.pdf pdf_icon

FDD8580-6

isc N-Channel MOSFET Transistor FDD8580 FEATURES Drain Current I =35A@ T =25 D C Drain Source Voltage V =20V(Min) DSS Static Drain-Source On-Resistance R =9.0m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒

 8.1. Size:388K  fairchild semi
fdd8586 fdu8586.pdf pdf_icon

FDD8580-6

January 2007 FDD8586/FDU8586 tm N-Channel PowerTrench MOSFET 20V, 35A, 5.5m Features General Description Max rDS(on) = 5.5m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 8.5m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWM controllers. It h... See More ⇒

Detailed specifications: DTU09N03, E10P02, EMB60N06A, EMFA0P02J, F3055L-TO252, FDD390N15AL, FDD3N40TM, FDD8444-NL, 8N60, FDN304P-NL, FDN335N-NL, FDN337N-NL, FDN338P-NL, FDS4435-NL, FDS4450, FDS4465-NL-9, FDS4685-NL

Keywords - FDD8580-6 MOSFET specs

 FDD8580-6 cross reference

 FDD8580-6 equivalent finder

 FDD8580-6 pdf lookup

 FDD8580-6 substitution

 FDD8580-6 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

↑ Back to Top
.