Справочник MOSFET. FDD8580-6

 

FDD8580-6 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDD8580-6
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 71 W
   Предельно допустимое напряжение сток-исток |Uds|: 20 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 15 V
   Пороговое напряжение включения |Ugs(th)|: 1.5 V
   Максимально допустимый постоянный ток стока |Id|: 65 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 26 nC
   Время нарастания (tr): 120 ns
   Выходная емкость (Cd): 730 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.006 Ohm
   Тип корпуса: TO252

 Аналог (замена) для FDD8580-6

 

 

FDD8580-6 Datasheet (PDF)

 ..1. Size:813K  cn vbsemi
 fdd8580-6.pdf

FDD8580-6 FDD8580-6

FDD8580&-6www.VBsemi.twN-Channel 20-V (D-S)175 _C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)aD 175_C Maximum Junction TemperatureD 100% Rg Tested 0.006 @ VGS = 4.5 V 6520200.008 @ VGS = 2.5 V 45DTO-252GDrain Connected to TabG D STop View SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Par

 7.1. Size:333K  fairchild semi
 fdd8580 fdu8580.pdf

FDD8580-6 FDD8580-6

July 2006FDD8580/FDU8580tmN-Channel PowerTrench MOSFET 20V, 35A, 9mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically Max rDS(on) = 9m at VGS = 10V, ID = 35Ato improve the overall efficiency of DC/DC converters using Max rDS(on) =13m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWMcontrollers. It has been opti

 7.2. Size:287K  inchange semiconductor
 fdd8580.pdf

FDD8580-6 FDD8580-6

isc N-Channel MOSFET Transistor FDD8580FEATURESDrain Current : I =35A@ T =25D CDrain Source Voltage: V =20V(Min)DSSStatic Drain-Source On-Resistance: R =9.0m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

 8.1. Size:388K  fairchild semi
 fdd8586 fdu8586.pdf

FDD8580-6 FDD8580-6

January 2007FDD8586/FDU8586tmN-Channel PowerTrench MOSFET 20V, 35A, 5.5mFeatures General Description Max rDS(on) = 5.5m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 8.5m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWMcontrollers. It h

 8.2. Size:287K  inchange semiconductor
 fdd8586.pdf

FDD8580-6 FDD8580-6

isc N-Channel MOSFET Transistor FDD8586FEATURESDrain Current : I =35A@ T =25D CDrain Source Voltage: V =20V(Min)DSSStatic Drain-Source On-Resistance: R =5.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

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