All MOSFET. FDS9435 Datasheet

 

FDS9435 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDS9435
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 4.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 14 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: SO8

 FDS9435 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDS9435 Datasheet (PDF)

 ..1. Size:1397K  cn vbsemi
 fds9435.pdf

FDS9435 FDS9435

FDS9435www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop V

 0.1. Size:64K  fairchild semi
 fds9435a.pdf

FDS9435 FDS9435

October 2001 FDS9435A 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 5.3 A, 30 V R = 50 m @ V = 10 V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 80 m @ V = 4.5 V DS(ON) GSprocess. It has been optimized for power management applications requiring a wide range of gave

 0.2. Size:194K  onsemi
 fds9435a.pdf

FDS9435 FDS9435

FDS9435A 30V P-Channel PowerTrench Features MOSFET 5.3 A, 30 V R = 50 m @ V = 10 VDS(ON) GSGeneral Description R = 80 m @ V = 4.5 V DS(ON) GSThis P-Channel MOSFET is a rugged gate version of ON Low gate chargeSemiconductors advanced PowerTrench process. It has been optimized for power management applications requiring Fast switching speed

 0.3. Size:840K  cn vbsemi
 fds9435a-nl.pdf

FDS9435 FDS9435

FDS9435A-NLwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DT

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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