FDS9435A-NL PDF and Equivalents Search

 

FDS9435A-NL Specs and Replacement

Type Designator: FDS9435A-NL

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: SO8

FDS9435A-NL substitution

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FDS9435A-NL datasheet

 ..1. Size:840K  cn vbsemi
fds9435a-nl.pdf pdf_icon

FDS9435A-NL

FDS9435A-NL www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D T... See More ⇒

 6.1. Size:64K  fairchild semi
fds9435a.pdf pdf_icon

FDS9435A-NL

October 2001 FDS9435A 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 5.3 A, 30 V R = 50 m @ V = 10 V DS(ON) GS Fairchild Semiconductor s advanced PowerTrench R = 80 m @ V = 4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gave... See More ⇒

 6.2. Size:194K  onsemi
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FDS9435A-NL

FDS9435A 30V P-Channel PowerTrench Features MOSFET 5.3 A, 30 V R = 50 m @ V = 10 V DS(ON) GS General Description R = 80 m @ V = 4.5 V DS(ON) GS This P-Channel MOSFET is a rugged gate version of ON Low gate charge Semiconductor s advanced PowerTrench process. It has been optimized for power management applications requiring Fast switching speed... See More ⇒

 7.1. Size:1397K  cn vbsemi
fds9435.pdf pdf_icon

FDS9435A-NL

FDS9435 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top V... See More ⇒

Detailed specifications: FDS4897A, FDS4935BZ-NL-38, FDS4936, FDS6675B, FDS8333C, FDS8435A, FDS8984-NL, FDS9435, RU7088R, FDS9945-NL, FDT1600N10A, FDW2601NZ, FL014N, FNK10N25B, FQD13N10LTF, FQD20N06LE, FQU13N06

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