FTU36N06N Specs and Replacement
Type Designator: FTU36N06N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 59.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 281 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 typ Ohm
Package: TO251
FTU36N06N substitution
- MOSFET ⓘ Cross-Reference Search
FTU36N06N datasheet
ftu36n06n.pdf
FTU36N06N www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.032 at VGS = 10 V 35d TrenchFET Power MOSFET 60 21.7 0.037 at VGS = 4.5 V 30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply D TO-251 - Seconda... See More ⇒
Detailed specifications: FR120N, FR2307Z, FR5305, FR5505, FR9N20D, FSS210, FTD2017, FTD2017A, IRF640, FU120N, FU9024N, FW232A-TL-E, FW342-TL, G2306A, G2309, GE3401, GF4435
Keywords - FTU36N06N MOSFET specs
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