All MOSFET. FTU36N06N Datasheet

 

FTU36N06N Datasheet and Replacement


   Type Designator: FTU36N06N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 59.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 281 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032(typ) Ohm
   Package: TO251
 

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FTU36N06N Datasheet (PDF)

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FTU36N06N

FTU36N06Nwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.032 at VGS = 10 V35d TrenchFET Power MOSFET60 21.70.037 at VGS = 4.5 V30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power SupplyDTO-251- Seconda

Datasheet: FR120N , FR2307Z , FR5305 , FR5505 , FR9N20D , FSS210 , FTD2017 , FTD2017A , IRF640 , FU120N , FU9024N , FW232A-TL-E , FW342-TL , G2306A , G2309 , GE3401 , GF4435 .

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