FTU36N06N Datasheet and Replacement
Type Designator: FTU36N06N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 59.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 281 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032(typ) Ohm
Package: TO251
FTU36N06N substitution
FTU36N06N Datasheet (PDF)
ftu36n06n.pdf

FTU36N06Nwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.032 at VGS = 10 V35d TrenchFET Power MOSFET60 21.70.037 at VGS = 4.5 V30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power SupplyDTO-251- Seconda
Datasheet: FR120N , FR2307Z , FR5305 , FR5505 , FR9N20D , FSS210 , FTD2017 , FTD2017A , IRFP460 , FU120N , FU9024N , FW232A-TL-E , FW342-TL , G2306A , G2309 , GE3401 , GF4435 .
History: STP12NM50N | WMB240P10HG4 | NVTFS6H854NL | B80N06 | HMS8N60 | CEU20P10 | 6HP04CH
Keywords - FTU36N06N MOSFET datasheet
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History: STP12NM50N | WMB240P10HG4 | NVTFS6H854NL | B80N06 | HMS8N60 | CEU20P10 | 6HP04CH



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