FW342-TL Specs and Replacement
Type Designator: FW342-TL
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 typ Ohm
Package: SO8
FW342-TL substitution
- MOSFET ⓘ Cross-Reference Search
FW342-TL datasheet
fw342-tl.pdf
FW342-TL www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at VGS... See More ⇒
Detailed specifications: FR9N20D, FSS210, FTD2017, FTD2017A, FTU36N06N, FU120N, FU9024N, FW232A-TL-E, IRF640N, G2306A, G2309, GE3401, GF4435, GT4953, GTT8205S, H7N0308CF, HAF2007-90S
Keywords - FW342-TL MOSFET specs
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