All MOSFET. IM4435G Datasheet

 

IM4435G Datasheet and Replacement


   Type Designator: IM4435G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018(typ) Ohm
   Package: SO8
 

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IM4435G Datasheet (PDF)

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IM4435G

IM4435Gwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 DG

Datasheet: HM25P06K , HM3400PR , HM4409 , HM4410 , HM70P04K , HM8810E , HS50N06DA , IM2132 , TK10A60D , IPP048N04 , IPP048N06 , IRF3410 , IRF4435TR , IRF5305STR , IRF540NSTRPBF , IRF540ZP , IRF5802TR .

History: BR80N08A | FQA90N10V2 | IRF7317TR | IRF4435TR | STD10NM65N | MTB090N06N3 | SSP80R1K3S

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