FCPF22N60NT MOSFET Datasheet: N-Ch, 600V, 22A. Full specification with pinout and replacement list

FCPF22N60NT Specs and Replacement

Type Designator: FCPF22N60NT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm

Package: TO220F

FCPF22N60NT substitution

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FCPF22N60NT datasheet

..1. Size:757K fairchild semi
fcp22n60n fcpf22n60nt.pdf pdf_icon

July 2009 SupreMOS TM FCP22N60N / FCPF22N60NT tm N-Channel MOSFET 600V, 22A, 0.165 Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling BVDSS>650V @ TJ = 150oC process that differentiates it from preceding multi-epi based tech- nologies.... See More ⇒

..2. Size:754K onsemi
fcp22n60n fcpf22n60nt.pdf pdf_icon

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

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fcpf2250n80z.pdf pdf_icon

December 2014 FCPF2250N80Z N-Channel SuperFET II MOSFET 800 V, 2.6 A, 2.25 Features Description RDS(on) = 1.8 Typ.) SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 11 nC) charge balance technology for outstanding low on-resistance Low Eoss (Typ. ... See More ⇒

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fcpf220n80.pdf pdf_icon

May 2015 FCPF220N80 N-Channel SuperFET II MOSFET 800 V, 23 A, 220 m Features Description Typ. RDS(on) = 188 m SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 78 nC) charge balance technology for outstanding low on-resistance Low Eoss (Typ. 7.5 uJ @ 4... See More ⇒