Справочник MOSFET. FCPF22N60NT

 

FCPF22N60NT Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FCPF22N60NT
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 39 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 22 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.165 Ohm
   Тип корпуса: TO220F
     - подбор MOSFET транзистора по параметрам

 

FCPF22N60NT Datasheet (PDF)

 ..1. Size:757K  fairchild semi
fcp22n60n fcpf22n60nt.pdfpdf_icon

FCPF22N60NT

July 2009SupreMOS TMFCP22N60N / FCPF22N60NT tmN-Channel MOSFET600V, 22A, 0.165Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchilds next generation of highvoltage super-junction MOSFETs, employs a deep trench filling BVDSS>650V @ TJ = 150oCprocess that differentiates it from preceding multi-epi based tech-nologies.

 ..2. Size:754K  onsemi
fcp22n60n fcpf22n60nt.pdfpdf_icon

FCPF22N60NT

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:650K  fairchild semi
fcpf2250n80z.pdfpdf_icon

FCPF22N60NT

December 2014FCPF2250N80ZN-Channel SuperFET II MOSFET800 V, 2.6 A, 2.25 Features Description RDS(on) = 1.8 Typ.) SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 11 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ.

 8.2. Size:641K  fairchild semi
fcpf220n80.pdfpdf_icon

FCPF22N60NT

May 2015FCPF220N80N-Channel SuperFET II MOSFET800 V, 23 A, 220 mFeatures Description Typ. RDS(on) = 188 m SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 78 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ. 7.5 uJ @ 4

Другие MOSFET... FCP9N60N , STU432L , FCPF11N60NT , STU428S , FCPF13N60NT , STU426S , FCPF16N60NT , STU421S , 8N60 , STU420S , FCPF7N60 , STU419S , FCPF7N60NT , STU419A , FCPF9N60NT , STU417S , FDA032N08 .

History: SI9945BDY | NVTFS002N04C

 

 
Back to Top

 


 
.