All MOSFET. STU420S Datasheet

 

STU420S MOSFET. Datasheet pdf. Equivalent


   Type Designator: STU420S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Qgⓘ - Total Gate Charge: 15 nC
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TO252 DPAK

 STU420S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STU420S Datasheet (PDF)

 ..1. Size:91K  samhop
 stu420s std420s.pdf

STU420S STU420S

S TU/D420SS amHop Microelectronics C orp.July 05,2006N-Channel Logic Level E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y FEATUR ESS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.24 @ VGS = 10V24A40VTO-252 and TO-251 Package.30 @ VGS =4.5VDDGSGSTU SERIES STD SERIESTO-252AA(D-PAK) TO-251(l-PA

 9.1. Size:113K  samhop
 stu426s std426s.pdf

STU420S STU420S

S TU/D426SS amHop Microelectronics C orp.Oct,2007 ver1.1N-Channel Logic Level E nhancement Mode Field E ffect TransistorPR ODUCT S UMMAR Y FEATUR ESS uper highdense cell design for lowR DS (ON).TypVDS S ID R DS (ON) ( m )R ugged and reliable.8 @ VGS =10V40V 53ATO-252 and TO-251 Package.10 @ VGS =4.5VDDGSGSTU SERIES STD SERIESTO-252AA(D-PAK) TO-251(l-PAK)

 9.2. Size:119K  samhop
 stu421s std421s.pdf

STU420S STU420S

GreenProductSTU/D421SSamHop Microelectronics Corp.Aug.20,2006P-Channel Logic Level Enhancement Mode Field Effect TransistorPRODUCT SUMMARY FEATURESRDS(ON) ( m ) MaxVDSS ID Super high dense cell design for low RDS(ON).Rugged and reliable.45 @ VGS = -10V-40V -10ATO-252 and TO-251 Package.60 @ VGS = -4.5VDDDGGGSSSTU SERIES STD SERIESTO-252AA(D-PAK)

 9.3. Size:94K  samhop
 stu428s std428s.pdf

STU420S STU420S

S TU/D428SS amHop Microelectronics C orp.Mar.8,2007N-Channel Logic Level E nhancement Mode Field E ffect TransistorFEATUR ESPR ODUCT S UMMAR YS uper high dense cell design for low R DS (ON).TypVDS S ID R DS (ON) ( m )R ugged and reliable.8 @ VGS =10VSurface Mount Package.40V 50A10 @ VGS =4.5VESD Protected.DDGGSSTU SERIES STD SERIESTO-252AA(D-PAK) TO-

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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